VS-GB75YF120N Allicdata Electronics
Allicdata Part #:

VS-GB75YF120N-ND

Manufacturer Part#:

VS-GB75YF120N

Price: $ 234.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: IGBT 1200V 100A 480W ECONO
More Detail: IGBT Module 1200V 100A 480W Chassis Mount ECONO2...
DataSheet: VS-GB75YF120N datasheetVS-GB75YF120N Datasheet/PDF
Quantity: 1000
12 +: $ 212.87500
Stock 1000Can Ship Immediately
$ 234.16
Specifications
Series: --
Part Status: Active
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Power - Max: 480W
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 100A
Current - Collector Cutoff (Max): 250µA
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: ECONO2 4PACK
Description

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Introduction

The VS-GB75YF120N is an insulated gate bipolar transistor (IGBT) module, which belongs to a family of devices known as ‘transistors’. This transistor device uses the principle of bipolar junction transistor (BJT) technology and is capable of working at high frequencies and current levels. The technology of IGBT modules also allows for a wide range of switching capabilities, which make them highly adaptable for many uses.

Application Field

VS-GB75YF120N can be used in a number of applications. It is often used for the control and regulation of high power motors, high power power supplies, and audio high frequency amplifiers. IGBT modules can also be used in motor drives, light controll and LED lighting. In these cases, the device can provide a suitable solution that allows for precise control of the system.

In addition, IGBT modules are often used in the control of circuits that interface with digital devices. This includes applications such as clock synchronization, communication bus switching, and decoupling of analog and digital signals. As with other types of transistor devices, IGBT modules are good at controlling high frequency signals and as a result, are often used to power mobile phones, wireless networks and optical systems.

Working Principle

Essentially, the VS-GB75YF120N works on the principle of bipolar junction transistor (BJT) technology. Through this technology, it displays properties of both MOSFETs and BJTs. This gives it the ability to operate at high current levels while providing a high degree of switchability.

The device works by using two different junction regions, known as the collector and emitter. These two regions form a insulated gate bipolar transistor (IGBT) capable of switching high current levels and high frequencies. When a gate voltage is applied, it modulates the current flow between the two junctions. This allows the device to control the switching current and speed. This is further enhanced by the device’s fast switching times.

Ultimately, the working principle of the VS-GB75YF120N is what makes it suitable for many applications and gives it the ability to meet the needs of many users. By providing an adjustable switching current and switching speed, this device gives users the flexibility to make the most of the device and its capabilities.

Conclusion

The VS-GB75YF120N is an excellent choice for switching applications. Its ability to provide a wide range of switching capabilities makes it ideal for use in many sectors including automotive, lighting, telecommunications and industrial. Its built in fast switching variations also provides users with an unparalleled degree of flexibility when implementing it into their systems. Furthermore, the device’s working principle ensures that the current flow is always regulated, providing an impressive level of efficiency and reliability.

The specific data is subject to PDF, and the above content is for reference

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