Allicdata Part #: | VS-GB90DA60UGI-ND |
Manufacturer Part#: |
VS-GB90DA60U |
Price: | $ 45.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | TRANSISTOR INSLTED GATE BIPOLAR |
More Detail: | IGBT Module NPT Single 600V 147A 625W Chassis Moun... |
DataSheet: | VS-GB90DA60U Datasheet/PDF |
Quantity: | 1000 |
160 +: | $ 41.70840 |
Series: | -- |
Part Status: | Active |
IGBT Type: | NPT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 147A |
Power - Max: | 625W |
Vce(on) (Max) @ Vge, Ic: | 2.8V @ 15V, 100A |
Current - Collector Cutoff (Max): | 100µA |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SOT-227-4 |
Supplier Device Package: | SOT-227 |
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VS-GB90DA60U IGBT power modules are designed for high-current, low-power applications. They have a variety of advantages, including higher current ratings, faster rise and fall times, better switching efficiency, and longer life expectancy. In order to achieve these advantages, the IGBT power modules need to be designed properly and installed correctly.
IGBT Application Field
The application field of the VS-GB90DA60U IGBT power module is best viewed as having two major uses: high-power pulse generators and pulse-width modulation (PWM) switching circuits. The power requirement of these two applications must be carefully considered when selecting the right IGBT module. In the case of high-power pulse generators, an IGBT power module with a higher voltage rating is needed in order to ensure sufficient energy is released in the form of a pulse. On the other hand, a lower voltage rating is required for PWM switching circuits in order to prevent the circuit from experiencing excessive heat buildup.
IGBT Working Principle
The working principle of an IGBT power module is based on the principle of charge injection. Basically, an IGBT module contains a pair of two back-to-back, insulated gate transistors (IGTs). When the gate of one transistor is electrically charged, it injects charge into the other transistor, which then causes it to conduct current. By alternating the charge to each transistor, the IGBT can be used to modulate the output current, allowing it to be used in a variety of high-current, low-power PWM-based switching circuits.
Theoretically, an ideal IGBT is a three-terminal, four-quadrant device. Its gate terminal is used to control the conduction through the IGBT by injecting a current or voltage into the gate. Its drain and source terminals are used to carry the load current in either direction. Once the gate terminal is charged or supplied with a voltage, the IGBT conducts current, allowing the current to flow through the drain and source terminals in either direction.
Although IGBTs are primarily used in PWM switching applications, they can also be used in high-power pulse generators. Because of their high current ratings, IGBTs can be used to generate short pulses of high current, and are capable of generating power pulses of up to 100MW. Due to their fast switching speeds, they can also be used to generate high speed pulse waveforms.
Overall, the VS-GB90DA60U IGBT power module has a variety of applications due to its high current rating, fast switching speed, and ability to handle high-power pulses. It is an ideal choice for high-power pulse generators and PWM-based switching circuits.
The specific data is subject to PDF, and the above content is for reference
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