
Allicdata Part #: | VS-GB90SA120UGI-ND |
Manufacturer Part#: |
VS-GB90SA120U |
Price: | $ 56.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | TRANSISTOR INSLTED GATE BIPOLAR |
More Detail: | IGBT Module NPT Single 1200V 149A 862W Chassis Mou... |
DataSheet: | ![]() |
Quantity: | 6 |
1 +: | $ 51.17490 |
10 +: | $ 48.61840 |
25 +: | $ 47.33870 |
100 +: | $ 43.82040 |
Series: | -- |
Part Status: | Active |
IGBT Type: | NPT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 149A |
Power - Max: | 862W |
Vce(on) (Max) @ Vge, Ic: | 3.9V @ 15V, 75A |
Current - Collector Cutoff (Max): | 250µA |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SOT-227-4 |
Supplier Device Package: | SOT-227 |
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Transistors - IGBTs - Modules
The VS-GB90SA120U is a short-circuit-proof, isolated basegate IGBT module suitable for high-power switching applications. It features a high-speed switching time of 900V/50mA and a nominal current of 5.9A. This IGBT module is designed for applications requiring high power and fast switching speeds, such as drives, wind turbines, inverter systems, adjustable speed drives and solar inverters.
Structure of VS-GB90SA120U
The construction of the VS-GB90SA120U is simple yet robust and designed to improve performance, reliability and safety. It consists of a Monolithic Integral Gate and Emitter Common (MIGEC) power device, a full-bridge section, a DC voltage regulator and an anti-parallel diode. The full-bridge section consists of four IGBTs connected in series, which share a common emitter connection. The DC voltage regulator is used to maintain a tight voltage control over the high voltage Vcc rail, while the anti-parallel diode is provided to protect the IGBTs from reverse current.
Application Fields
The VS-GB90SA120U is most commonly used in motor control, power conversion, and power supply applications. It is suitable for drives, wind turbines, inverter systems, motor drives and adjustable speed drives, as well as for renewable energy applications such as solar inverters. Additionally, the module can be used for pulse-width-modulation (PWM) control, or as an insulated-gate bipolar transistor (IGBT) switch.
Working Principle
The working principle of the VS-GB90SA120U is based on the high-power IGBTs connected in parallel in the full-bridge section. When a gate voltage is applied to one of the IGBTs, the device is switched on, allowing a high current to flow between the emitter and the collector. When the gate voltage is removed, the IGBT switches off, thereby effectively shorting the emitter and collector of the full-bridge section. The voltage regulator maintains the Vcc voltage at a constant level to ensure reliable operation, while the anti-parallel diode is used to protect the IGBTs from reverse current.
Conclusion
The VS-GB90SA120U is a short-circuit-proof, isolated basegate IGBT module. Thanks to its high switching speed and nominal current of 5.9A, it is suitable for applications requiring high power and fast switching speeds, such as drives, wind turbines, inverter systems, adjustable speed drives and solar inverters. Additionally, it can be used for PWM control, or as an IGBT switch. The working principle of the VS-GB90SA120U relies on the full-bridge section, which consists of four IGBTs connected in series, and on the voltage regulator and the anti-parallel diode utilised to ensure reliable operation and protect the IGBTs from reverse current, respectively.
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