| Allicdata Part #: | VS-GT100DA120UF-ND |
| Manufacturer Part#: |
VS-GT100DA120UF |
| Price: | $ 29.32 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | OUTPUT & SW MODULES - SOT-227 IG |
| More Detail: | IGBT Module Trench Single 1200V 187A 890W Chassis ... |
| DataSheet: |  VS-GT100DA120UF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 26.65530 |
| 10 +: | $ 24.86670 |
| 25 +: | $ 23.82460 |
| 100 +: | $ 21.59100 |
| 250 +: | $ 20.84650 |
| Series: | HEXFRED® |
| Part Status: | Active |
| IGBT Type: | Trench |
| Configuration: | Single |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Current - Collector (Ic) (Max): | 187A |
| Power - Max: | 890W |
| Vce(on) (Max) @ Vge, Ic: | 2.55V @ 15V, 100A |
| Current - Collector Cutoff (Max): | 100µA |
| Input Capacitance (Cies) @ Vce: | 6.15nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | No |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | SOT-227-4, miniBLOC |
| Supplier Device Package: | SOT-227 |
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In today\'s modern electronics industry, the VS-GT100DA120UF is one of the most important power module components. This device can be used in many applications, from telecommunication infrastructure to industrial frequency drive systems. The VS-GT100DA120UF is part of the Insulated Gate Bipolar Transistor (IGBT) module family and it offers superior protection for applications where high frequency switching is required. It is a three-terminal device that provides low on-state voltage drop, high frequency operation and low switching losses. Additionally, it has a low power dissipation and high efficiency, making it ideal for a wide variety of applications.
The VS-GT100DA120UF is a single-stage IGBT module optimized for high frequency operation. It is composed of an IGBT chip which is connected in parallel with a fast-recovery diode and a Zener diode. All these components are housed in a multilayer hermetic package with enhanced thermal characteristics. It includes an isolated baseplate and epoxy resin for improved heat dissipation.
The working principle of the VS-GT100DA120UF power module is based on its IGBT chip, which is a three-terminal transistor. The gate (G) terminal is used to control the current flowing through the other two terminals, the collector (C) and the emitter (E). The current flow is controlled by applying a negative voltage to the gate terminal; the higher the voltage, the more current is allowed to flow. When the gate voltage is zero, the IGBT is in an "OFF" state; no current flows. The VS-GT100DA120UF also features a fast-recovery diode which is used to prevent voltage transients across the device when it switches from the "OFF" to the "ON" state.
The VS-GT100DA120UF power module can be used in a wide range of applications, such as motor drives, electric vehicles, wind turbines, home appliances, UPS, renewable energy, power supplies, and many other industrial applications. It is also suitable for indoor and outdoor use, thanks to its high operating temperature range (up to 175°C). Moreover, it has a long life cycle and a low switching noise, making it an ideal choice for high frequency switching applications.
In conclusion, the VS-GT100DA120UF power module is an incredibly useful component for modern electronic systems. Its excellent performance characteristics and wide range of application make it an ideal choice for a variety of industrial and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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