Allicdata Part #: | VS-GT100NA120UX-ND |
Manufacturer Part#: |
VS-GT100NA120UX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | IGBT 1200V 134A 463W SOT-227 |
More Detail: | IGBT Module Trench Single 1200V 134A 463W Chassis ... |
DataSheet: | VS-GT100NA120UX Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | Trench |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 134A |
Power - Max: | 463W |
Vce(on) (Max) @ Vge, Ic: | 2.85V @ 15V, 100A |
Current - Collector Cutoff (Max): | 100µA |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227 |
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The VS-GT100NA120UX is a part of a series of power modules developed by Sanken Electric. This particular model is an Insulated Gate Bipolar Transistor (IGBT) module that is feature-rich and suitable for a range of applications. This IGBT module provides high power switching, high efficiency, low losses and low noise during operation, making it an attractive option for many power supply applications.
The VS-GT100NA120UX consists of an IGBT element and a diode element, each in a single package. It is designed for use in general purpose circuit operations, such as AC motor control, power factor correction, and solar inverters. The module has a high surge current capability, allowing it to be used with the most demanding power supply applications.
The working principle of the VS-GT100NA120UX is based on its IGBT element, which acts as a voltage-controlled switch (VSC). The IGBT’s gate input is controlled with a voltage, usually from a microcontroller, applying voltage or current to the gate to turn it on and off. When the IGBT is on, a low resistance path is established between the emitter and the collector of the IGBT, allowing current to flow. When it is off, no current can flow, as the resistance between the emitter and collector is very high. The voltage between the emitter and collector is proportional to the voltage at the gate, making the IGBT extremely efficient and accurate when used with a precise control circuit. The diode element of the module provides the current return path when the IGBT is in a non-conduction state, ensuring that the IGBT is always in a safe and stable state.
Overall, the VS-GT100NA120UX makes for a robust and reliable IGBT module with many useful features. It has a current rating of 100A, a voltage rating of 1200V, a maximum junction temperature of 175°C, and a power dissipation of up to 450W. It has a fast switching time of up to 120ns for both the IGBT and the Diode, and a high di/dt rating of 4A/µs. Additionally, it features low thermal resistance and high levels of EMI protection. This makes it an ideal solution for a wide range of high power circuit applications.
The specific data is subject to PDF, and the above content is for reference
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