VS-GT100TP120N

Series:	--
Part Status:	Obsolete
IGBT Type:	Trench
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	180A
Power - Max:	652W
Vce(on) (Max) @ Vge, Ic:	2.35V @ 15V, 100A
Current - Collector Cutoff (Max):	5mA
Input Capacitance (Cies) @ Vce:	12.8nF @ 30V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	175°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	INT-A-PAK (3 + 4)
Supplier Device Package:	INT-A-PAK

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VS-GT100TP120N application field and working principleTransistors - IGBTs - ModulesThe VS-GT100TP120N is an advanced isolated integrated gate bipolar transistor (IGBT) module widely used in electronic power systems. This particular module has superior electrical performance characteristics and is designed for medium-power level applications. With its low on-state conduction loss and high switching frequencies, this IGBT module is suitable for a variety of applications, including motor drives, adjustable speed drives, inverters, power converters and static switching regulators. Below is a look at its application field and working principle.Application FieldThe VS-GT100TP120N IGBT module is suitable for use in several medium-power level applications, including motor drives, adjustable speed drives, inverters and power converters. It is specifically designed for use in a wide range of medium-power level applications where high frequency operation and low on-state conduction loss are key requirements. In motor drives, the VS-GT100TP120N IGBT module allows for precise speed control and higher speed/torque dynamics. In adjustable speed drives, it provides variable speed control and smoother motion. In inverters, it allows for higher efficiency by providing accurate performance with low voltage stress. And in power converters, it supplies controlled power for charging and discharging applications.Working PrincipleThe IGBT module consists of an insulated gate bipolar transistor which is connected to two other terminals (one positive, one negative) and forms a bidirectional switch. The terminals are connected to a drain terminal, a source terminal and a control terminal, which is where the voltage applied to the transistor helps it switch on and off. The voltage applied to the control terminal can be either positive or negative depending on the type of transistor used.The primary advantage of the VS-GT100TP120N IGBT module over other types of transistors is its ability to offer high speed switching, high power dissipation and low on-state conduction losses. When switching off, the high speed switching property prevents the traditional reverse recovery current that is normally generated in other devices. This results in lower switching losses and higher overall efficiency. Additionally, the low on-state conduction loss allows for reductions in power dissipation and allows for higher-power utilization.ConclusionThe VS-GT100TP120N IGBT module is a superior advanced isolated integrated gate bipolar transistor module designed for medium-power level applications. It allows for precise speed control and higher speed/torque dynamics in motor drives, variable speed control and smoother motion in adjustable speed drives, higher efficiency in inverters and controlled power for charging and discharging applications in power converters. The IGBT module allows for high speed switching, high power dissipation and low on-state conduction losses which result in lower switching losses and higher overall efficiency.

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