VS-GT100TP60N

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The VS-GT100TP60N is an insulated gate bipolar transistor (IGBT) module. It is a power semiconductor module that is designed for fast operation, high current capability and low switching losses.IGBTs are a type of power transistors which can be switched very quickly, resulting in reduced losses that enable high efficiency in power switching operations.They are commonly used as components in power supplies, motor controllers, inverters, and other applications that require fast or high current switching.The VS-GT100TP60N module is a part of Vicor’s broad line of essential IGBT modules and is designed to provide long-term reliability and efficient operation in demanding automotive and industrial applications.

The module features a standard 100A IGBT in a 6-pack package with an integrated dual-diode bridge. The package is hermetically sealed, providing protection against environmental conditions such as shock, vibration, and corrosion.The VS-GT100TP60N has a maximum collector current of 100A, collector-emitter voltage of 600V, and a collector-emitter voltage of 800V.Its maximum operating frequency is 20kHz, with a temperature range of -40°C to +175°C.

The main application of the VS-GT100TP60N IGBT module is for use in motor drives, audio amplifier designs, uninterruptible power supplies, solar and wind power converters, and other power applications requiring high current and fast switching times.The module’s high current-handling capability, high voltage rating, and low start and turn-off times make it ideal for these types of power applications.The module’s hermetically sealed package also makes it suitable for applications that require the module to be able to withstand harsh environmental conditions, such as those found in industrial and off-highway vehicles.

The VS-GT100TP60N IGBT module’s working principle is based on the use of an insulated gate bipolar transistor (IGBT). The IGBT is a three-terminal switch, with a control input terminal (the gate), an output terminal (the collector), and an output terminal (the emitter). When a voltage is applied to the gate, the transistor switches on and allows current to flow from the collector to the emitter. When no voltage is applied to the gate, the transistor switches off, effectually turning the flow of current off. The amount of voltage applied to the gate, and the resulting amount of current that flows, is controlled by the gate-source voltage of the IGBT module.

Due to its fast switching times and high current-handling capability, the VS-GT100TP60N IGBT module is well-suited for a variety of applications, including motor drives, audio amplifier designs, uninterruptible power supplies, solar and wind power converters, and other power applications requiring high current and fast switching times. Its hermetically sealed housing also makes it suitable for applications that require operation in harsh environmental conditions.The module’s working principle is based on the use of an IGBT, which is a three-terminal switch with a control input terminal, an output terminal, and an output terminal. When a voltage is applied to the gate, the transistor switches on and allows current to flow from the collector to the emitter, while no voltage applied to the gate turns off the flow of current. The amount of voltage applied to the gate and the resulting amount of current that flows is controlled by the gate-source voltage of the IGBT module.

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