VS-GT120DA65U Allicdata Electronics
Allicdata Part #:

VS-GT120DA65U-ND

Manufacturer Part#:

VS-GT120DA65U

Price: $ 16.59
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: OUTPUT & SW MODULES - SOT-227 IG
More Detail: IGBT Module Trench Single Switch 650V 167A 577W Ch...
DataSheet: VS-GT120DA65U datasheetVS-GT120DA65U Datasheet/PDF
Quantity: 1000
160 +: $ 15.08220
Stock 1000Can Ship Immediately
$ 16.59
Specifications
Series: FRED Pt®
Part Status: Active
IGBT Type: Trench
Configuration: Single Switch
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 167A
Power - Max: 577W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Current - Collector Cutoff (Max): 50µA
Input Capacitance (Cies) @ Vce: 6.6nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Description

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Introduction

The VS-GT120DA65U is a high-speed, high-performance insulated gate bipolar transistor (IGBT) module. These modules provide high power density and switching performance, making them ideal for a variety of applications. This article provides an overview of the VS-GT120DA65U application field and working principle, and how they can be used in a wide range of applications.

Application Field

The VS-GT120DA65U is mainly used in medium and high energy applications, including motor control, welding, AC/DC and DC/DC power conversion, and high frequency switching. It is suitable for various applications, including uninterruptible power supply, traction inverter, high power traction inverter, induction heating, wind power and solar energy, and powertrain application.

High Power Applications

The VS-GT120DA65U is ideal for high power applications. It features a high maximum junction temperature range of 150 degrees Celsius, allowing for operation under extreme conditions. It has a low gate charge and high collector-emitter voltage, making it suitable for motor control and high frequency switching, as well as AC/DC and DC/DC power conversion. In addition, the VS-GT120DA65U has a low on-state losses, meaning it can operate with high efficiency and reduce power consumption.

Industrial Applications

The VS-GT120DA65U can also be used in a variety of industrial applications. It can be used as a solid state relay for controlling AC/DC and DC/DC motors, and as a switching device for high frequency industrial and communication equipment. It can also be used in welding applications, where it can control the welding current and voltage, and provide high power density and switching performance.

Working Principle

The VS-GT120DA65U is an N-channel IGBT module. It is composed of two parts: the IGBT and the freewheeling diode. The IGBT has an insulated gate and is made up of three electrodes: the emitter, base, and collector. The emitter and collector are connected to an external power circuit and the base is connected to a gate voltage. When a suitable amount of voltage is applied to the IGBT, electrons flow from the emitter to the collector, thus creating a current. The freewheeling diode is a diode connected in parallel with the IGBT, opposite the polarity. When the IGBT is turned off, the diode functions as a short-circuit, conducting current in the opposite direction and dissipating the stored energy. This prevents the voltage from increasing and helps to protect the IGBT from damage.

Conclusion

The VS-GT120DA65U is a high-performance IGBT module that provides a high power density and switching performance. It is suitable for a range of applications, including motor control, welding, AC/DC and DC/DC power conversion, and high frequency switching. It features a high maximum junction temperature range and low on-state losses, providing high efficiency and reduced power consumption. It can also be used in a variety of industrial applications, making it a versatile IGBT module. The working principle utilizes both an IGBT and a freewheeling diode, ensuring high current flows while protecting the device from damage.

The specific data is subject to PDF, and the above content is for reference

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