Allicdata Part #: | VS-GT175DA120U-ND |
Manufacturer Part#: |
VS-GT175DA120U |
Price: | $ 79.42 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | IGBT 1200V 288A 1087W SOT-227 |
More Detail: | IGBT Module Trench Single 1200V 288A 1087W Chassis... |
DataSheet: | VS-GT175DA120U Datasheet/PDF |
Quantity: | 181 |
1 +: | $ 72.19170 |
10 +: | $ 68.46460 |
25 +: | $ 66.60170 |
100 +: | $ 62.09960 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | Trench |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 288A |
Power - Max: | 1087W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 100A |
Current - Collector Cutoff (Max): | 100µA |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227 |
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VS-GT175DA120U is an IGBT module featuring a N-channel insulated gate bipolar transistor, which is designed for motor drivers, power converters and other power applications. It is ideal for applications that require large electrical capacities with low system cost and high reliability.
Application Field
The VS-GT175DA120U is a single module of IGBT, providing a direct replacement for power MOSFETs , offering the same low on-resistance function but with significantly lower system cost. It is widely used in many industries, such as electrical vehicle, consumer and industrial applications that require high power conversion efficiency or have stringent switching requirements like inverters, motor drives, AC/DC converters, welding machines, UPS systems, and H-bridge applications.
Working Principle
The VS-GT175DA120U utilizes an insulated gate bipolar transistor (IGBT) and insulated gate resistor (IGR) are highly reliable power devices. IGBT is a three-terminal device with two main terminals-the collector and the emitter-which are insulated from one another by the gate and IGR. The IGR is used to reduce switching surge and to shorten the reverse recovery time. The device is normally off and conducts with a low voltage (less than 1V) applied at the gate terminal. When the gate voltage is increased, electrons are supplied to the collector-emitter junction and the device conduct electricity.
During operation, the current flowing through the device is controlled by the gate voltage, which controls the amount of electrons in the device. The higher the gate voltage, the more electrons are injected into the device and the greater the amount of current that can flow through it. By adjusting the gate voltage, the device can be switched on and off to create a high or low current conduction. The device can also be used to regulate current, since a lower gate voltage will result in a reduced current flow.
Conclusion
The VS-GT175DA120U IGBT module provides reliable and cost-effective solutions for various applications, especially power conversion. Its high-efficiency, compact size and low switching losses make it a great choice for industrial and consumer applications. By understanding the working principle of the IGBT module, users can successfully achieve their desired performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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