
Allicdata Part #: | VS-GT200TP065N-ND |
Manufacturer Part#: |
VS-GT200TP065N |
Price: | $ 69.45 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | IGBT |
More Detail: | IGBT Module Trench Half Bridge 650V 221A 600W Chas... |
DataSheet: | ![]() |
Quantity: | 1000 |
24 +: | $ 63.13610 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 221A |
Power - Max: | 600W |
Vce(on) (Max) @ Vge, Ic: | 2.12V @ 15V, 200A |
Current - Collector Cutoff (Max): | 60µA |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | INT-A-Pak |
Supplier Device Package: | INT-A-PAK |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The VS-GT200TP065N is a high-power capable insulated gate bipolar transistor (IGBT) module with a wide range of power-handling capabilities in both low- and high-voltage applications. This IGBT module is extremely efficient, with a low gate current consumption resulting in an excellent operating temperature range. IGBTs provide a simple, cost-effective solution to the power electronics industry by combining the switching speed, low switching losses, and adaptive conduction paths offered by an MOSFET with the low saturation voltage and output current controllability characteristic of traditional bipolar transistors.
The VS-GT200TP065N device is specifically designed for motor control applications, offering an adjustable on-state voltage with a single gate control signal, as well as excellent low-speed switching. It is capable of up to 650A peak current output, providing a very effective control solution for power supply circuits. In addition, the VS-GT200TP065N features a high current capability, high operating frequency, high speed turn-on, fast switching, and low on-state losses.
The working principle of the VS-GT200TP065N IGBT module is relatively simple. The main components of the module are the IGBT and the gate driver, which control the power flow and the conduction paths of the device. The gate driver is connected to the voltage supply, which is the source of the current controlling the IGBT\'s on-state characteristics. The gate driver applies a voltage to the gate of the IGBT to enable current to flow from the source to the drain, raising the voltage on the gate to its maximum value. The higher the voltage and current supplied, the higher the on-state current of the IGBT and the greater its power capabilities, meaning a single-digit mW IGBT module like the VS-GT200TP065N can support very high power applications.
The VS-GT200TP065N IGBT module is a reliable and robust solution for those requiring a high-power, high-efficiency switching device. It is ideal for applications such as motor and speed control, uninterruptible power supplies, power converters, and solar inverters. It has a simple gate driver circuit and it is also capable of direct connection to gate stacks and popular motor controllers, as well as PLCs and other control systems. Furthermore, the wide current range of the device makes it suitable for multiple applications. The device is protected against short-circuits, ESD, UV light, transient voltage spikes, and other system interferences.
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