Allicdata Part #: | VS-GT400TH120N-ND |
Manufacturer Part#: |
VS-GT400TH120N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | IGBT 1200V 600A 2119W DIAP |
More Detail: | IGBT Module Trench Half Bridge 1200V 600A 2119W Ch... |
DataSheet: | VS-GT400TH120N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | Trench |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 600A |
Power - Max: | 2119W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 400A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 28.8nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Double INT-A-PAK (3 + 8) |
Supplier Device Package: | Double INT-A-PAK |
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The VS-GT400TH120N module is a high-power, high-performance insulated gate bipolar transistor (IGBT) module, part of a wide range of IGBT modules available in the market. Its main purpose is to serve as a fast-switching, low-loss power switch in many applications. It is designed for low voltage operation and is suitable for many applications where fast switching and high-efficiency power management are needed.
Application Fields:
The VS-GT400TH120N module is used in a variety of applications, including motor control, uninterruptible power supply (UPS), robotics, medical equipment, and renewable energy systems. The module is also used in industrial applications where low-voltage switching is needed, such as in the automotive industry. Its fast switching speed and great performance make it suitable for high-frequency applications such as motor control, HVAC systems, and renewable energy systems. It is also used in a wide range of electrical and electronic systems that require fast switching.
Working Principle:
The IGBT module uses a three-terminal transistor structure that contains two N-type semiconductor layers between the two P-type semiconductor layers. This structure is responsible for the increased switching speeds and high efficiency of the IGBT module. The voltage difference between the collector and the supply source is used to control the current from the collector to the emitter, depending on the current flowing through the semiconductor layers. This allows the IGBT to switch quickly and with very low losses. The voltage drop between the collector and the emitter can vary, depending on the current passing through the device.
The VS-GT400TH120N module provides high levels of efficiency, low on-state voltage drop, and can be used for high-frequency switching. This makes it a great choice for a wide variety of applications, including motor control and UPS systems. In addition, it is designed for low-voltage applications, making it an excellent choice for renewable energy systems and other low-power applications.
The VS-GT400TH120N module is a great choice for applications where fast switching, high efficiency, and low voltage drops are desired. It is becoming increasingly popular in applications due to its high level of performance and cost-effectiveness. As more devices are designed to use IGBT modules, the VS-GT400TH120N module is set to become even more popular in the near future.
The specific data is subject to PDF, and the above content is for reference
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