Diode sensor interface - Allicdata Electronics

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R6004KNX

ROHM Semiconductor

View more Packaging: Bulk
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 980 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs (Max): 20V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 40W (Tc)
Operating Temperature: -55C ~ 150C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FM
Package / Case: TO-220-3 Full Pack

486
Order

1+:

$1.0647

10+:

$0.9431

100+:

$0.7455

500+:

$0.5782

1000+:

$0.4564

R6004KNX-ND Datasheet

SI5858DU-T1-GE3

SI5858DU-T1-GE3
-ND

SI5858DU-T1-GE3

Vishay Siliconix

View more Series: LITTLE FOOT
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs (Max): 8V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2.3W (Ta), 8.3W (Tc)
Operating Temperature: -55C ~ 150C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK ChipFet Dual
Package / Case: PowerPAK ChipFET Dual

1000
Order

1+:

$0

SI5858DU-T1-GE3-ND Datasheet

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