Precision isolation amplifier - Allicdata Electronics

Photo	Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)	PDF
	R6004KNX-ND	R6004KNX	ROHM Semiconductor	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 980 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 40W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	486 Order	1+: $1.0647 10+: $0.9431 100+: $0.7455 500+: $0.5782 1000+: $0.4564
	SI5858DU-T1-GE3 -ND	SI5858DU-T1-GE3	Vishay Siliconix	View more Series: LITTLE FOOT Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.3W (Ta), 8.3W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Dual Package / Case: PowerPAK ChipFET Dual	1000 Order	1+: $0

Photo

Allicdata Part#

Mft.Part#

Company

Spec.

QTY.

Pricing(USD)

PDF

R6004KNX-ND

R6004KNX

ROHM Semiconductor

View more Packaging: Bulk
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 980 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Vgs (Max): 20V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 40W (Tc)
Operating Temperature: -55C ~ 150C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FM
Package / Case: TO-220-3 Full Pack

486
Order

1+:

$1.0647

10+:

$0.9431

100+:

$0.7455

500+:

$0.5782

1000+:

$0.4564

SI5858DU-T1-GE3
-ND

SI5858DU-T1-GE3

Vishay Siliconix

View more Series: LITTLE FOOT
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs (Max): 8V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2.3W (Ta), 8.3W (Tc)
Operating Temperature: -55C ~ 150C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK ChipFet Dual
Package / Case: PowerPAK ChipFET Dual

1000
Order

1+:

< 8 9 10 11 12

Hot Searches: precision isolation amplifier high-precision isolation amplifier isolated linear amplifier isolated operational amplifier isolated buffer amplifier isolation amplifier precision amplifier strong isolation amplifier texas strong isolation amplifier texas isolation amplifier integrated isolation amplifier dc isolation amplifier isolation amplifier 16-soic reinforced isolation amplifier inductive isolation amplifier voltage isolation amplifier automotive isolation amplifier galvanic isolation amplifier texas isolation amplifier ic coupler isolation amplifier

Search Result:precision isolation amplifier

Related Categories