Allicdata Part #: | FII24N17AH1-ND |
Manufacturer Part#: |
FII24N17AH1 |
Price: | $ 23.91 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT PHASE LEG HV ISOPLUS I4PAK5 |
More Detail: | IGBT Array NPT Half Bridge 1700V 18A 140W Through ... |
DataSheet: | FII24N17AH1 Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 21.73950 |
Mounting Type: | Through Hole |
Package / Case: | i4-Pac™-5 |
Supplier Device Package: | ISOPLUS i4-PAC™ |
Series: | -- |
Part Status: | Active |
IGBT Type: | NPT |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 18A |
Power - Max: | 140W |
Vce(on) (Max) @ Vge, Ic: | 6V @ 15V, 16A |
Current - Collector Cutoff (Max): | 100µA |
Input Capacitance (Cies) @ Vce: | 2.4nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -55°C ~ 150°C (TJ) |
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The FII24N17AH1 device is an IGBT array offered by Fairchild Semiconductor. It contains two IGBT ("Insulated Gate Bipolar Transistor") sections with fast switching time and damping diode. The device is suitable for high side and low side switch driver applications, as well as buffer applications.
Applications
The FII24N17AH1 IGBT array is used in many different applications such as DC motor drive systems, industrial automation, white goods, and common mode noise suppression in solar inverters. Since the device consists of two IGBTs, it can be used for two switch drive applications and can be used in applications such as DC-DC and AC-DC convertors.
Features
The FII24N17AH1 is designed with a wide range of features to make it suitable for many applications. It has a total internal gate charge of 163 nC, maximum current capability of 3A, and a peak diode recovery current of 10A, making it suitable for high power circuit switching applications. The device also offers a low drain to source saturation voltage of 1.0 V and low gate to source voltage of 5V.
Working Principle
The FII24N17AH1 device consists of two IGBTs and two damping diodes. When the IGBTs are on in the active state, the gate is supplied with a positive voltage, which causes the IGBTs to turn on. This in turn allows current to flow from the drain to the source, thus providing switching between two points. When the IGBTs are off and in the non active state, the gate voltage is held at a negative level, which keeps the IGBTs in an off state. When the IGBTs are in the off state, the damping diodes provide a path for discharge current.
Conclusion
The FII24N17AH1 is an IGBT array that is ideal for many high power switching applications. It is designed with two IGBTs and two damping diodes, and offers a range of features such as low drain to source saturation voltage and low gate to source voltage. It is suitable for a variety of low and high side switching applications, such as DC motor drive systems and common mode noise suppression in solar inverters.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FII24N17AH1 | IXYS | 23.91 $ | 1000 | IGBT PHASE LEG HV ISOPLUS... |
FII24N17AH1S | IXYS | 24.25 $ | 1000 | IGBT PHASE LEG HV ISOPLUS... |
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