FII24N17AH1 Allicdata Electronics
Allicdata Part #:

FII24N17AH1-ND

Manufacturer Part#:

FII24N17AH1

Price: $ 23.91
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT PHASE LEG HV ISOPLUS I4PAK5
More Detail: IGBT Array NPT Half Bridge 1700V 18A 140W Through ...
DataSheet: FII24N17AH1 datasheetFII24N17AH1 Datasheet/PDF
Quantity: 1000
25 +: $ 21.73950
Stock 1000Can Ship Immediately
$ 23.91
Specifications
Mounting Type: Through Hole
Package / Case: i4-Pac™-5
Supplier Device Package: ISOPLUS i4-PAC™
Series: --
Part Status: Active
IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 18A
Power - Max: 140W
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 2.4nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FII24N17AH1 device is an IGBT array offered by Fairchild Semiconductor. It contains two IGBT ("Insulated Gate Bipolar Transistor") sections with fast switching time and damping diode. The device is suitable for high side and low side switch driver applications, as well as buffer applications.

Applications

The FII24N17AH1 IGBT array is used in many different applications such as DC motor drive systems, industrial automation, white goods, and common mode noise suppression in solar inverters. Since the device consists of two IGBTs, it can be used for two switch drive applications and can be used in applications such as DC-DC and AC-DC convertors.

Features

The FII24N17AH1 is designed with a wide range of features to make it suitable for many applications. It has a total internal gate charge of 163 nC, maximum current capability of 3A, and a peak diode recovery current of 10A, making it suitable for high power circuit switching applications. The device also offers a low drain to source saturation voltage of 1.0 V and low gate to source voltage of 5V.

Working Principle

The FII24N17AH1 device consists of two IGBTs and two damping diodes. When the IGBTs are on in the active state, the gate is supplied with a positive voltage, which causes the IGBTs to turn on. This in turn allows current to flow from the drain to the source, thus providing switching between two points. When the IGBTs are off and in the non active state, the gate voltage is held at a negative level, which keeps the IGBTs in an off state. When the IGBTs are in the off state, the damping diodes provide a path for discharge current.

Conclusion

The FII24N17AH1 is an IGBT array that is ideal for many high power switching applications. It is designed with two IGBTs and two damping diodes, and offers a range of features such as low drain to source saturation voltage and low gate to source voltage. It is suitable for a variety of low and high side switching applications, such as DC motor drive systems and common mode noise suppression in solar inverters.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FII2" Included word is 3
Part Number Manufacturer Price Quantity Description
FII24N17AH1 IXYS 23.91 $ 1000 IGBT PHASE LEG HV ISOPLUS...
FII24N17AH1S IXYS 24.25 $ 1000 IGBT PHASE LEG HV ISOPLUS...
FII24N170AH1 IXYS 0.0 $ 1000 IGBT 1700V 18A I4PAKIGBT ...
Latest Products
FII24N170AH1

IGBT 1700V 18A I4PAKIGBT Array NPT Half ...

FII24N170AH1 Allicdata Electronics
FII50-12E

IGBT PHASE NPT3 ISOPLUS I4-PAC-5IGBT Arr...

FII50-12E Allicdata Electronics
FII30-12E

IGBT PHASE TOP ISOPLUS I4-PAC-5IGBT Arra...

FII30-12E Allicdata Electronics
MMIX4B20N300

MOSFET N-CHIGBT Array Full Bridge 3000V...

MMIX4B20N300 Allicdata Electronics
MMIX4G20N250

MOSFET N-CHIGBT Array Full Bridge 2500V...

MMIX4G20N250 Allicdata Electronics
FII24N17AH1S

IGBT PHASE LEG HV ISOPLUS I4PAKSIGBT Arr...

FII24N17AH1S Allicdata Electronics