FII50-12E

Series:	--
Part Status:	Obsolete
IGBT Type:	NPT
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	50A
Power - Max:	200W
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 30A
Current - Collector Cutoff (Max):	400µA
Input Capacitance (Cies) @ Vce:	2nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	i4-Pac™-5
Supplier Device Package:	ISOPLUS i4-PAC™

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FII50-12E Application Field and Working Principle

Introduction

The FII50-12E IGBT (insulated-gate bipolar transistor) array is a powerful and cost-effective driver product designed with advanced power semiconductor technology and integrated circuits (ICs). It is used in a wide range of industrial, automotive, and robotics applications, such as power electronics, motor drives, solar inverters, solar panel drives, relay contacts drive, and printing machinery. IGBTs are widely used due to their advantages in high voltage and current control, low-noise operation, high efficiency and protection features.

Structure and Working Principle

To understand the working principle of the FII50-12E IGBT array, let’s first look at its physical structure. This module is composed of two cascaded IGBTs, each of which has its own cell array. These cells are connected in parallel and series, forming six-elements IGBT block. The gate drive voltage is applied to the input terminals of the array, and the output terminals of the array are connected to the load. The output current is determined by the gate drive voltage.The working principle of the IGBT array is straightforward. When a gate drive voltage is applied to the array, the voltage is divided equally between the two IGBTs, which in turn open the two parallel IGBT channels. This creates an electrical pathway between the array\'s input and output terminals, allowing current to flow. The current is then regulated by the magnitude of the gate drive voltage.

Other Features and Benefits

The FII50-12E IGBT array is built with advanced semiconductor technology, which provides long-term reliability, low noise, and low power consumption. It also has protection features, such as short-circuit protection and surge protection, to ensure safe operation. In addition, this array is designed to have a wide operating temperature range and a high insulation breakdown voltage, which make it suitable for use in most environments.The IGBT array can also be customized to meet the specific requirements of each application. For example, the output current can be adjusted for each cell, the gate drive voltage can be adjusted for each cell, and the module can be configured for a variety of different functions.

Conclusion

The FII50-12E IGBT array is a powerful and cost-effective driver product for a wide range of industrial, automotive, and robotics applications. It is built with advanced semiconductor technology, and can be configured to meet the specific needs of each application. In addition, this module has several protection features to ensure safe operation and a wide operating temperature range.

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