HGTD1N120BNS9A Allicdata Electronics

HGTD1N120BNS9A Discrete Semiconductor Products

Allicdata Part #:

HGTD1N120BNS9ATR-ND

Manufacturer Part#:

HGTD1N120BNS9A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 1200V 5.3A 60W TO252AA
More Detail: IGBT NPT 1200V 5.3A 60W Surface Mount TO-252AA
DataSheet: HGTD1N120BNS9A datasheetHGTD1N120BNS9A Datasheet/PDF
Quantity: 2500
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 2500Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 5.3A
Current - Collector Pulsed (Icm): 6A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A
Power - Max: 60W
Switching Energy: 70µJ (on), 90µJ (off)
Input Type: Standard
Gate Charge: 14nC
Td (on/off) @ 25°C: 15ns/67ns
Test Condition: 960V, 1A, 82 Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Base Part Number: HGTD1N120
Description

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An HGTD1N120BNS9A is an IGBT device, namely an Insulated Gate Bipolar Transistor device. It is a single device, and as such is capable of performing one specific function or operation in a circuit. IGBT devices are widely used in the fields of electronics and power systems, as they offer superior performance and efficiency to other types of switching components. The specific application of an HGTD1N120BNS9A device and its working principle are discussed in detail below.

The HGTD1N120BNS9A is a type of IGBT that is used in a variety of power electronics applications. It is typically used in applications such as motor drives and power supplies for industrial, automotive, and consumer electronics. It is often employed in switching circuits, as its ability to rapidly switch current on and off makes it particularly well suited for these applications. In these types of applications, the device is used to control the output of a given power supply, the speed of a motor, or the speed of a fan.

The working principle of an HGTD1N120BNS9A is based on the principle of a bipolar transistor. Like a bipolar transistor, the HGTD1N120BNS9A consists of two terminals, a collector and an emitter. When a voltage is applied to the collector, free electrons from the emitter move towards the collector, forming a current. The amount of current is determined by the amount of voltage applied to the collector.

The HGTD1N120BNS9A also includes an insulated gate, which is used to control the flow of current through the device. This gate is electrically insulated from the collector, allowing it to act as a gate that can be used to control the flow of the current. By applying a gate voltage, the gate can be used to modulate the current being drawn from the device. For example, a positive gate voltage will increase the current flowing through the device, while a negative gate voltage will decrease the current.

Another important feature of the HGTD1N120BNS9A is its ability to quickly turn on and off. This makes it ideal for applications where fast switching is required, such as motor drives or power supplies. The device is capable of switching at speeds of up to 18kHz, allowing it to be used in very high speed applications.

Overall, the HGTD1N120BNS9A is an IGBT device, specifically a single device, that is used for a variety of power electronics applications. It is capable of fast switching, and is used in applications where speed and efficiency are important. It works on the principle of a bipolar transistor, with an insulated gate acting as a gate to control the current flow. This allows it to be used to rapidly switch current on and off, making it a popular choice for applications such as motor drives and power supplies.

The specific data is subject to PDF, and the above content is for reference

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