HGTD1N120BNS9A Discrete Semiconductor Products |
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Allicdata Part #: | HGTD1N120BNS9ATR-ND |
Manufacturer Part#: |
HGTD1N120BNS9A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1200V 5.3A 60W TO252AA |
More Detail: | IGBT NPT 1200V 5.3A 60W Surface Mount TO-252AA |
DataSheet: | HGTD1N120BNS9A Datasheet/PDF |
Quantity: | 2500 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | NPT |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 5.3A |
Current - Collector Pulsed (Icm): | 6A |
Vce(on) (Max) @ Vge, Ic: | 2.9V @ 15V, 1A |
Power - Max: | 60W |
Switching Energy: | 70µJ (on), 90µJ (off) |
Input Type: | Standard |
Gate Charge: | 14nC |
Td (on/off) @ 25°C: | 15ns/67ns |
Test Condition: | 960V, 1A, 82 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Base Part Number: | HGTD1N120 |
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An HGTD1N120BNS9A is an IGBT device, namely an Insulated Gate Bipolar Transistor device. It is a single device, and as such is capable of performing one specific function or operation in a circuit. IGBT devices are widely used in the fields of electronics and power systems, as they offer superior performance and efficiency to other types of switching components. The specific application of an HGTD1N120BNS9A device and its working principle are discussed in detail below.
The HGTD1N120BNS9A is a type of IGBT that is used in a variety of power electronics applications. It is typically used in applications such as motor drives and power supplies for industrial, automotive, and consumer electronics. It is often employed in switching circuits, as its ability to rapidly switch current on and off makes it particularly well suited for these applications. In these types of applications, the device is used to control the output of a given power supply, the speed of a motor, or the speed of a fan.
The working principle of an HGTD1N120BNS9A is based on the principle of a bipolar transistor. Like a bipolar transistor, the HGTD1N120BNS9A consists of two terminals, a collector and an emitter. When a voltage is applied to the collector, free electrons from the emitter move towards the collector, forming a current. The amount of current is determined by the amount of voltage applied to the collector.
The HGTD1N120BNS9A also includes an insulated gate, which is used to control the flow of current through the device. This gate is electrically insulated from the collector, allowing it to act as a gate that can be used to control the flow of the current. By applying a gate voltage, the gate can be used to modulate the current being drawn from the device. For example, a positive gate voltage will increase the current flowing through the device, while a negative gate voltage will decrease the current.
Another important feature of the HGTD1N120BNS9A is its ability to quickly turn on and off. This makes it ideal for applications where fast switching is required, such as motor drives or power supplies. The device is capable of switching at speeds of up to 18kHz, allowing it to be used in very high speed applications.
Overall, the HGTD1N120BNS9A is an IGBT device, specifically a single device, that is used for a variety of power electronics applications. It is capable of fast switching, and is used in applications where speed and efficiency are important. It works on the principle of a bipolar transistor, with an insulated gate acting as a gate to control the current flow. This allows it to be used to rapidly switch current on and off, making it a popular choice for applications such as motor drives and power supplies.
The specific data is subject to PDF, and the above content is for reference
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