HGTD3N60C3S9A Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Obsolete
Moisture Sensitivity Level (MSL):	--
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	6A
Current - Collector Pulsed (Icm):	24A
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 3A
Power - Max:	33W
Switching Energy:	85µJ (on), 245µJ (off)
Input Type:	Standard
Gate Charge:	10.8nC
Td (on/off) @ 25°C:	--
Test Condition:	480V, 3A, 82 Ohm, 15V
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252AA

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Introduction

The HGTD3N60C3S9A is a single-chip, high-performance insulated gate bipolar transistor (IGBT) with a N-channel MOSFET. This product has been optimized to offer low conduction loss, high switching speed, and excellent device ruggedness with a high level of safety. This IGBT device is suitable for applications requiring a short conduction time such as high-frequency switching power supplies, high-frequency UPS systems, and AC motor controls.

Basic Characteristics

The HGTD3N60C3S9A has a maximum voltage rating of 600 volts and a maximum current rating of 9 amperes. It has a high switching speed and excellent device ruggedness with high-level safety due to its MOSFET gate driver. The gate-to-emitter voltage (Vce(sat)) is low and gate charge (Qg) is high. The device also has a low reverse transfer capacitance (Crss).

Application Field

The HGTD3N60C3S9A is ideal for applications requiring a short conduction time such as switched-mode power supplies, UPS systems, and AC motor controls. The device is suitable for use in high-current applications such as electrical vehicles. It is highly reliable for harsh electrical and temperature environments due to its low leakage current and high-temperature tolerance.

Working Principle

The working principle of the HGTD3N60C3S9A is based on the insulated gate bipolar transistor (IGBT) circuit. The N-channel MOSFET acts as the main switch for the conduction. When the gate voltage is higher than the threshold voltage, the channel is turned on and the current starts to flow from the source to the drain. The IGBT then acts as an amplifier which is controlled by the gate voltage. The amplified current flows through the IGBT and the load. When the gate voltage is decreased below the threshold level, the channel is turned off and the current stops flowing. The key characteristics of the HGTD3N60C3S9A are its low power losses, high switching speed, and low conduction loss. The high switching speed of the device allows for a high current rating and fast conduction. The low power losses and low conduction loss results in a more efficient operation and higher power stability.

Conclusion

The HGTD3N60C3S9A is a highly reliable, single-chip, high-performance insulated gate bipolar transistor (IGBT). It is ideal for applications that require a short conduction time such as high-frequency switching power supplies, UPS systems, and AC motor controls. The device has a low gate charge (Qg) and low Vce(sat). It has a high switching speed with high levels of safety, low power losses, and low conduction losses. This makes the HGTD3N60C3S9A an excellent choice for applications where reliability and stability are key.

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