ACDBCT360-HF Discrete Semiconductor Products |
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Allicdata Part #: | 641-1547-2-ND |
Manufacturer Part#: |
ACDBCT360-HF |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Comchip Technology |
Short Description: | DIODE SCHOTTKY 60V 3A 3220 |
More Detail: | Diode Schottky 60V 3A Surface Mount 3220/DO-214AB |
DataSheet: | ACDBCT360-HF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.15347 |
6000 +: | $ 0.14288 |
15000 +: | $ 0.14112 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 60V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 700mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 60V |
Capacitance @ Vr, F: | 180pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, No Lead |
Supplier Device Package: | 3220/DO-214AB |
Operating Temperature - Junction: | -55°C ~ 150°C |
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ACDBCT360-HF Application Field and Working Principle
The ACDBCT360-HF is a single diode rectifier specially designed for high frequency power correction applications. The device is designed for high efficiency, high temperature operation and is optimized for high current applications. The diode rectifier has a wide variety of power and efficiency characteristics, making it suitable for almost any power correction application.
Application Field
The ACDBCT360-HF can be used in various applications such as:
- High frequency Switching Power Supplies
- High frequency Inverters
- High frequency Battery Chargers
- Motor Drives for Electric and Hybrid Vehicles
- Telecommunications Equipment
Working Principle
The ACDBCT360-HF single diode rectifier functions by allowing current to flow in one direction while blocking current flow in the opposite direction. It operates by using a voltage-controlled semiconductor junction to perform the rectifying function. The diode rectifier is composed of a P-type and an N-type semiconductor material. When the P-type material is exposed to positive voltage and the N-type material is exposed to negative voltage, the P-N junction creates an electric field which results in a conduction path.
When the voltage across the P-N junction exceeds a certain value, known as the breakdown voltage, the electric field becomes strong enough to cause the P-N junction to break down, allowing current to flow across the junction in both directions. This breakdown voltage is dependent on the doping concentrations and the width of the depletion region of the P-N junction. The wider the depletion region, the lower the breakdown voltage.
Once the P-N junction has broken down, an avalanche current is generated which rapidly increases the junction voltage. This voltage builds until it reaches a certain breakdown voltage again, which creates a saturated voltage across the junction and allows current to flow. This saturation voltage is known as the diode\'s conduction voltage, and the current is known as the diode\'s forward current.
The ACDBCT360-HF utilizes the avalanche effect and offers advantages such as higher efficiency, lower temperature rise, and improved high-temperature performance. The device can handle currents up to 200A and frequencies up to 100kHz. It has a low conduction voltage of 0.7V, which results in low conduction losses. The device also provides low reverse recovery time (trr) of 2.3 ns and high junction temperature ratings of up to 175°C. The ACDBCT360-HF is a great choice for high-frequency power correction applications.
The specific data is subject to PDF, and the above content is for reference
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