Allicdata Part #: | 85HFLR10S02-ND |
Manufacturer Part#: |
VS-85HFLR10S02 |
Price: | $ 6.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 85A DO203AB |
More Detail: | Diode Standard, Reverse Polarity 100V 85A Chassis,... |
DataSheet: | VS-85HFLR10S02 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 5.78611 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 85A |
Voltage - Forward (Vf) (Max) @ If: | 1.75V @ 266.9A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 200ns |
Current - Reverse Leakage @ Vr: | 100µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-203AB |
Operating Temperature - Junction: | -40°C ~ 125°C |
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The VS-85HFLR10S02 diode is commonly found in a variety of applications, ranging from signal processing to power regulation systems. As a general-purpose single rectifier, it is designed to provide efficient, reliable, and cost-effective performance in a variety of electronic systems.
Rectifier diodes are used to convert AC voltage into DC voltage or current. The VS-85HFLR10S02 diodes provide full-wave rectification of alternating current, meaning that both the positive and negative peaks of the alternating waveform are rectified into a unidirectional output voltage. This rectifying function is used in many common applications, including DC voltage regulation, power conditioning, electrical protection systems, as well as audio and video signal conditioning.
The VS-85HFLR10S02 is a low-power single rectifier, designed to offer very low turn-on and reverse-recovery time characteristics. It features a current rating of 8.5 amps, a voltage rating of 100 volts, and a reverse-recovery time of 10µsec. Destructive avalanche breakdown voltage is rated at 150 volts.
The diode is constructed of an epitaxial, silicon-based material, making it suitable for many temperature and environmental conditions. It also features an in-line p-type substrate, which is key in controlling the turn-on and reverse-recovery times of the device. The substrate is further protected by a hermal-resistant foam packaging, allowing for superior heat dissipation and improved efficiency.
The VS-85HFLR10S02 utilizes a unique design, allowing for full-wave rectification with minimal current leakage. The diode relies on electrons tunneling across a very thin layer of material when in the breakdown voltage range. This process produces a current pulse from both the positive and negative sides of the alternating waveform, allowing for efficient output rectification.
The device operates with a relatively low voltage threshold. When an applied voltage exceeds the forward conduction rating of the device, the electrons in the tunneling region begin to flow and the junction potential increases, allowing the diode to begin conducting current. This process, known as avalanche breakdown, requires a high voltage threshold and relatively low reverse recovery time.
The application fields of such diodes include DC voltage regulation, power conditioning, as well as audio and video signal conditioning. They are also used in simple AC voltage conversion circuits, surge protection systems, and other specialized power conditions that require highly reliable, full-wave rectification. With its low-voltage requirements and superior thermal design, the VS-85HFLR10S02 is an ideal solution for any application requiring efficient and reliable power rectification.
The specific data is subject to PDF, and the above content is for reference
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