GD32F103CBT6 Datasheet(PDF) - GigaDevice Semiconductor (HK) Limited
Part No. | GD32F103CBT6 |
Description | GD32F103CBT6 device adopts, Flash access zero wait state to obtain maximum efficiency. It provides up to 3 MB of on-chip flash memory and up to 96 KB of SRAM memory. A variety of enhanced I/O and peripherals connected to two APB buses. The device provides up to three 12-bit ADCs, up to two 12-bit DACs, up to ten general-purpose 16-bit timers, two basic timers and two PWM advanced control timers, as well as standard and advanced communication interfaces. Power supply from 2.6 to 3.6 V power supply. Multiple power-saving modes can provide maximum flexibility to optimize between wake-up delay and power consumption, which is especially important to consider in low-power applications. |
Manufacturer Part | GigaDevice Semiconductor (HK) Limited |
Part Number | Components Description | Manufacturer |
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#252MXPR-2535A | FILTER HELICAL 405MHZ TYPE 7HW | |
#292KNAS-T1028Z | INDUCTOR ADJUST 100NH THRU HOLE 100nH Adjustable Inductor 35 @ 50MHz Radial |
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#5HT-36020AS-360 | FILTER HELICAL 360MHZ TYPE 5HT | |
#5HW-88560A-914 | FILTER HELICAL 914MHZ TYPE 5HW | |
#A1313AN-0001GGH=P3 | VARIABLE INDUCTORS 11.4PF Q= 72 50nH Adjustable Inductor 72 @ 100MHz Nonstandard |
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#A916CY-3R3M=P3 | FIXED IND 3.3UH 3.52A 26 MOHM 3.3µH Shielded Inductor 3.52A 26 mOhm Max Nonstandard |
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#A921CY-680M=P3 | FIXED IND 68UH 730MA 324 MOHM 68µH Shielded Inductor 730mA 324 mOhm Max Nonstandard |
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#B952AS-H-100M=P3 | FIXED IND 10µH Shielded Wirewound Inductor 2.7A 44 mOhm Max Nonstandard |
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#B952AS-H-120M=P3 | FIXED IND 12µH Shielded Wirewound Inductor 2.5A 51 mOhm Max Nonstandard |