GD32F103CBT6 Datasheet(PDF) - GigaDevice Semiconductor (HK) Limited

Part No. GD32F103CBT6
Description

GD32F103CBT6 device adopts, Flash access zero wait state to obtain maximum efficiency. It provides up to 3 MB of on-chip flash memory and up to 96 KB of SRAM memory. A variety of enhanced I/O and peripherals connected to two APB buses. The device provides up to three 12-bit ADCs, up to two 12-bit DACs, up to ten general-purpose 16-bit timers, two basic timers and two PWM advanced control timers, as well as standard and advanced communication interfaces. Power supply from 2.6 to 3.6 V power supply. Multiple power-saving modes can provide maximum flexibility to optimize between wake-up delay and power consumption, which is especially important to consider in low-power applications.

Manufacturer Part GigaDevice Semiconductor (HK) Limited


Part Number Components Description Manufacturer
#252MXPR-2535A FILTER HELICAL 405MHZ TYPE 7HW
#292KNAS-T1028Z INDUCTOR ADJUST 100NH THRU HOLE
100nH Adjustable Inductor 35 @ 50MHz Radial
#5HT-36020AS-360 FILTER HELICAL 360MHZ TYPE 5HT
#5HW-88560A-914 FILTER HELICAL 914MHZ TYPE 5HW
#A1313AN-0001GGH=P3 VARIABLE INDUCTORS 11.4PF Q= 72
50nH Adjustable Inductor 72 @ 100MHz Nonstandard
#A916CY-3R3M=P3 FIXED IND 3.3UH 3.52A 26 MOHM
3.3µH Shielded Inductor 3.52A 26 mOhm Max Nonstandard
#A921CY-680M=P3 FIXED IND 68UH 730MA 324 MOHM
68µH Shielded Inductor 730mA 324 mOhm Max Nonstandard
#B952AS-H-100M=P3 FIXED IND
10µH Shielded Wirewound Inductor 2.7A 44 mOhm Max Nonstandard
#B952AS-H-120M=P3 FIXED IND
12µH Shielded Wirewound Inductor 2.5A 51 mOhm Max Nonstandard
< a href=' '>Customer Service