RN2907FE,LF(CB Datasheet(PDF) - Toshiba Semiconductor and Storage
| Part No. | RN2907FE,LF(CB |
| Description | TRANS 2PNP PREBIAS 0.1W ES6 Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6 |
| Manufacturer Part | Toshiba Semiconductor and Storage |
| Part Number | Components Description | Manufacturer |
|---|---|---|
| #292KNAS-T1028Z | INDUCTOR ADJUST 100NH THRU HOLE 100nH Adjustable Inductor 35 @ 50MHz Radial |
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| #458PT-1720=P3 | RF TRANSFORMER 5T:2T:2T 5TERM. G | |
| #5HW-88560A-914 | FILTER HELICAL 914MHZ TYPE 5HW | |
| #A916CY-3R3M=P3 | FIXED IND 3.3UH 3.52A 26 MOHM 3.3µH Shielded Inductor 3.52A 26 mOhm Max Nonstandard |
|
| #A921CY-680M=P3 | FIXED IND 68UH 730MA 324 MOHM 68µH Shielded Inductor 730mA 324 mOhm Max Nonstandard |
|
| #B952AS-H-100M=P3 | FIXED IND 10µH Shielded Wirewound Inductor 2.7A 44 mOhm Max Nonstandard |
|
| #B952AS-H-101M=P3 | FIXED IND 100µH Shielded Wirewound Inductor 900mA 380 mOhm Max Nonstandard |
|
| #B952AS-H-121M=P3 | FIXED IND 120µH Shielded Wirewound Inductor 800mA 460 mOhm Max Nonstandard |
|
| #B952AS-H-150M=P3 | FIXED IND 15µH Shielded Wirewound Inductor 2.3A 62 mOhm Max Nonstandard |
