RN2907FE,LF(CB Discrete Semiconductor Products |
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Allicdata Part #: | RN2907FELF(CBTR-ND |
Manufacturer Part#: |
RN2907FE,LF(CB |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.1W ES6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2907FE,LF(CB Datasheet/PDF |
Quantity: | 4000 |
4000 +: | $ 0.03043 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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RN2907FE,LF is a pre-biased high-side and low-side NPN dual discrete transistor array. This small package is specially designed for automotive applications. The integrated pre-biased transistors are easy to use and provide best-in-class features and efficiency. This device provides high-side and low-side NPN transistors in a single package. The low-side transistor can be used in high-side and low-side switch applications. The high-side transistor can be used in high-side switch applications.
The RN2907FE,LF is an enhancement of previous dual transistor arrays by providing better performance, improved isolation, and integrated pre-biased transistors in one package. This device is designed with a special focus on automotive applications where space, cost, and power dissipation are vital design considerations. This device also supports a wide range of operating voltages, ranging from 3.0V to 28V, so that it can be used in a variety of vehicular applications. The integrated pre-biased transistors allow for easy use and provide optimized efficiency.
The RN2907FE,LF can be used in a variety of automotive applications such as engine control, power control, and Body Control Module (BCM). This device is especially suited for use in power control systems as it allows easy circuitry and efficient operation. In addition, the device also provides high-side and low-side switch drive capability. The low-side transistor can be used as an auxiliary switch for controlling the current in applications requiring PWM or low-side control.
The device’s high-side switch capability makes it ideal for use in applications such as starter motor control, powertrain control and car radio control. By using the integrated pre-biased transistors, the efficiency and reliability of the application is improved, as the pre-biased transistors provide a low on-resistance. The RN2907FE,LF also supports a wide range of operating voltages, allowing it to be used in a variety of automotive applications.
The RN2907FE,LF is an easy-to-use pre-biased high-side and low-side NPN dual discrete transistor array. This device has been specially designed for automotive applications where space, cost, and power dissipation are important design considerations. This device is ideal for engine control, power control, and BCM applications. This device provides high-side and low-side switch drive capability, making it suitable for powertrain control, starter motor control, and car radio control. In addition, the integrated pre-biased transistors allow for easy use and provide optimized efficiency. The RN2907FE,LF supports a wide range of operating voltages, allowing it to be used in a variety of automotive applications.
The specific data is subject to PDF, and the above content is for reference
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