RN4602TE85LF Datasheet(PDF) - Toshiba Semiconductor and Storage
Part No. | RN4602TE85LF |
Description | TRANS NPN/PNP PREBIAS 0.3W SM6 Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6 |
Manufacturer Part | Toshiba Semiconductor and Storage |
Part Number | Components Description | Manufacturer |
---|---|---|
#292KNAS-T1028Z | INDUCTOR ADJUST 100NH THRU HOLE 100nH Adjustable Inductor 35 @ 50MHz Radial |
|
#5HW-88560A-914 | FILTER HELICAL 914MHZ TYPE 5HW | |
#A1313AN-0001GGH=P3 | VARIABLE INDUCTORS 11.4PF Q= 72 50nH Adjustable Inductor 72 @ 100MHz Nonstandard |
|
#A921CY-680M=P3 | FIXED IND 68UH 730MA 324 MOHM 68µH Shielded Inductor 730mA 324 mOhm Max Nonstandard |
|
#B952AS-H-100M=P3 | FIXED IND 10µH Shielded Wirewound Inductor 2.7A 44 mOhm Max Nonstandard |
|
#B952AS-H-121M=P3 | FIXED IND 120µH Shielded Wirewound Inductor 800mA 460 mOhm Max Nonstandard |
|
#B952AS-H-150M=P3 | FIXED IND 15µH Shielded Wirewound Inductor 2.3A 62 mOhm Max Nonstandard |
|
#B952AS-H-180M=P3 | FIXED IND 18µH Shielded Wirewound Inductor 2A 79 mOhm Max Nonstandard |
|
#B952AS-H-1R1N=P3 | FIXED IND 1.1µH Shielded Wirewound Inductor 6A 11 mOhm Max Nonstandard |