RN4602TE85LF

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The RN4602TE85LF is a dual bipolar junction transistor array (BJT) that utilizes a pre-biased design. The array is suitable for use in motion control and logic applications, including low power logic, analogue mixing and signal switching. In addition, its high voltage performance, low collector-to-emitter capacitance and low voltage differential make it well suited to high-frequency applications, such as audio amplifiers and television monitors.

Substrate Properties

The RN4602TE85LF has an integrated substrate that provides superior thermal and electrical insulation. It also provides a low thermal resistance for greater power dissipation and improved device performance. Furthermore, the set potential is typically 17.5 V (20% overvoltage tolerance).

Principle of Operation

A pre-biased BJT array typically contributes to system energy savings. This array is designed such that any transistor within the array can turn on even if the base of the transistor is at 0 V. This eliminates the need to apply a bias voltage at the base of the transistor and reduces the system power requirements. Additionally, the pre-biased design enhances system performance as it minimizes the time between the application of a signal and the resulting response.

The RN4602TE85LF can achieve a very low collector-to-emitter voltage (VCE) with a low enable current (< 5 μA). This allows for very low capacitive load of the output transistors, allowing faster switching speeds than a comparable BJT array with a larger enable current. Furthermore, the avalanche breakdown voltage can achieve an extra-wide VCE range of up to 200 V (average current-limiting capability of 8 A, typ). This wide VCE range allows the output transistors to bring the voltage on the output nodes to levels near ground level, thus reducing the need for additional circuitry.

Device Characteristics

The RN4602TE85LF has a low base-emitter voltage (VBE), with a typical value of 1.25 V and a maximum VBE of 1.35 V. Furthermore, the array features a collector-emitter saturation voltage of 0.2 V, which allows for successful operation with a low power supply voltage. The device has a maximum collector current of 800 mA and can operate at a maximum junction temperature of 150°C.

The RN4602TE85LF has a high gain-bandwidth product (pre-biased: 2.5 GHz, dual: 4 GHz). This makes the array well suited for high gain applications and for switching or carrying high-speed digital signals. In addition, the device is rated for a maximum power dissipation of 3 W, which is capable of handling high power applications.

Conclusion

The RN4602TE85LF is a dual pre-biased BJT array with superior substrate properties and high voltage performance. Its low voltage differential, low collector-to-emitter capacitance, and low enable current make it suitable for high-frequency applications, including motion control and logic applications, such as audio amplifiers and television monitors. Its wide VCE range allows the output transistors to bring the voltage on the output nodes to ground level, thus reducing the need for additional circuitry. Furthermore, its high gain-bandwidth product makes it suitable for high gain applications and for switching or carrying high-speed digital signals.

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