0072.1061.B1

TVS - Varistors, MOVs

Transient Voltage Suppressors (TVSs) are the most common type of overvoltage protection devices used in circuit protection. They are typically employed in applications which range from protecting sensitive electronic parts to protecting high frequency, high-power systems. The two most common types of TVSs are Varistors and MOVs (Metal Oxide Varistors).

0072.1061.B1 application field and working principle

The 0072.1061.B1 is a generic TVS designed for overvoltage protection against transients and surges. It is suitable for use in both automotive and other high voltage applications. In general, its maximum clamping voltage is specified at 600V and its maximum peak pulse current is 2000A.

The 0072.1061.B1 is made using an NPN-C structure, which is composed of an NPN silicon substrate and a P+ stressor layer. NPN-C structures are usually used in automotive and other high voltage applications which require higher power dissipation and lower capacitance. The 0072.1061.B1 provides an optimal ratio of the voltage and current characteristics to protect both low and high-power applications.

The 0072.1061.B1 is typically employed in situations where the transient or surge is short lived and require fast response times. Its working principle is based on the avalanche breakdown mechanism—when the voltage across the device increases beyond its specified maximum voltage, a high electric current is released from the device and diverted to ground. This current spike is capable of clamping the voltage to a safe value, thus protecting the circuit from excessive voltages. Besides, the 0072.1061.B1 also offers some clamping hysteresis—the device automatically turns off after the transient is clamped, thus preventing damage to the clamped circuit due to excessively high voltages.

In summary, the 0072.1061.B1 is a generic TVS designed for overvoltage protection against transients and surges. It is suitable for use in both automotive and other high voltage applications, and provides a good ratio of voltage and current characteristics. It employs an NPN-C structure, and its working principle is based on the avalanche breakdown mechanism.