Allicdata Part #: | 030-8589-005-ND |
Manufacturer Part#: |
030-8589-005 |
Price: | $ 0.00 |
Product Category: | Uncategorized |
Manufacturer: | ITT Cannon, LLC |
Short Description: | CAB CON 8 PIN 10 F80 A152 |
More Detail: | N/A |
DataSheet: | 030-8589-005 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Active |
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Introduction
030-8589-005 is an integrated circuit (IC) design for high frequency RF power amplifiers. It is a component mainly used in mobile communication base stations for both cellular and non-cellular applications. The 030-8589-005 is a modern RF power amplifier that provides excellent performance in terms of linearity, efficiency, and noise figure. This circuit is capable of providing a frequency range of up to 900 MHz, has a power output of up to 10 kW and is able to function at output powers as low as 0.01 dB.
Application Field
The 030-8589-005 is widely used in the industrial, commercial and military fields. This type of RF power amplifier is commonly used in base stations that provide service for cellular communication for both voice and data, including 3G and 4G services. The 030-8589-005 is also designed for use in baseband applications, such as satellite communication systems, point-to-point links, terrestrial and near-earth platforms. In addition, the 030-8589-005 is suitable for use in wireless LAN, Bluetooth, and Wi-Fi applications. This type of amplifier can also be used in navigation beacons, military applications, radar systems, and other applications that require high frequency power amplifiers.
Working Principle
The 030-8589-005 is designed for operation in the frequency range of 900 MHz. It is a two-stage amplifier and works by first amplifying the input signal in the first stage and then amplifying this signal further in the second stage. The first stage consists of a GaAs MESFET transistor (GaAs-TiO2 substrate) that is used as the input amplifier. This transistor provides a good input match and allows the 030-8589-005 to achieve maximum gain. The second stage is a GaAs MESFET (GaAs-AiN substrate) transistor that is used as the final amplifier. This transistor provides the 030-8589-005 with excellent linearity and gain, while still achieving high efficiency. The 030-8589-005 also includes an input matching network, a temperature compensation network, an output matching network, and an output band-pass filter.
Conclusion
In conclusion, the 030-8589-005 is an integrated circuit designed for high frequency RF power amplifiers. This type of amplifier is widely used in the industrial, commercial, military and cellular communications fields. The 030-8589-005 is designed for operation in the frequency range of 900 MHz and is capable of providing a power output of up to 10 kW. This circuit is characterized by excellent linearity, gain, and efficiency. The 030-8589-005 also includes components such as an input matching network, a temperature compensation network, an output matching network, and an output band-pass filter.
The specific data is subject to PDF, and the above content is for reference
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