0912-25

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	55V
Frequency - Transition:	960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f):	--
Gain:	8.5dB ~ 10dB
Power - Max:	125W
DC Current Gain (hFE) (Min) @ Ic, Vce:	10 @ 300mA, 5V
Current - Collector (Ic) (Max):	2.5A
Operating Temperature:	200°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	55CT
Supplier Device Package:	55CT

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Introduction to Transistors

A transistor is a three-terminal semiconductor device used in various electronics applications. It is used to amplify electrical signals and can be used to switch electrical circuits. The two most common types of transistors are bipolar junction transistors (BJT) and field-effect transistors (FET).

Bipolar Junction Transistors - 0912-25 Application Field and Working Principle

Bipolar junction transistors are unipolar devices that are used for a variety of applications, including radio-frequency (RF) amplifiers. This type of transistor is comprised of two oppositely doped regions that are formed from three different materials, such as Si, Ge, and GaAs. The 0912-25 application field of BJTs is used in RF amplifiers and switch applications.The working principle of the bipolar junction transistor is based on the modulation of the current flow between the emitter and collector junction based on the applied base current. The base current is used to control the flow of emitter and collector current, which is usually expressed as common-emitter current gain.

Conclusion

Bipolar junction transistors are used in a variety of radio-frequency applications, ranging from amplifiers to switches. The 0912-25 application field and working principle of these devices is based on the modulation of current flow between the emitter and collector junctions. BJTs are incredibly useful for RF applications, as they are able to provide high levels of gain and linearity over a wide range of frequencies.

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