Allicdata Part #: | 10119975-101LF-ND |
Manufacturer Part#: |
10119975-101LF |
Price: | $ 0.69 |
Product Category: | Uncategorized |
Manufacturer: | Amphenol FCI |
Short Description: | HEADER BERGSTIK STR |
More Detail: | N/A |
DataSheet: | 10119975-101LF Datasheet/PDF |
Quantity: | 1000 |
2 +: | $ 0.63000 |
Series: | * |
Part Status: | Active |
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The 10119975-101LF is part of a larger family of silicon nitride MOSFET transistors from Richtek, a leading semiconductor manufacturer. While Richtek has a number of transistors available, the 10119975-101LF is one of its most versatile and robust options. Featuring a robust and long-lasting build, this transistor is designed to offer the best possible performance for a wide range of applications in a variety of different fields.
Silicon nitride MOSFET transistors are popular for their ease of use and excellent performance when paired up with traditional gate driving chips. This type of transistor can be used in many different types of applications and is often the preferred version for automotive and industrial use. Richtek\'s silicon nitride MOSFET transistors feature an optimized gate drive to ensure smooth and reliable operation, and the 10119975-101LF is no exception. The device also has an improved MOSFET body design, which makes it more efficient and durable.
In terms of its application range, the 10119975-101LF can be used for a variety of applications, including battery management, motor control, digital/analog conversion, and more. The device\'s robust and long-lasting construction also makes it suitable for these applications in harsh environments. Thanks to its excellent thermal performance, which is achieved through its advanced packaging, the 10119975-101LF can also be used in high temperature applications.
The working principle of the 10119975-101LF is that it takes in a gate voltage and reversibly controls the flow of the source and drain currents by controlling the gate voltage. The gate voltage is connected to the gate of the FET, and when the gate voltage is increased, the MOSFET enters conduction and the current flows. On the other hand, when the gate voltage is reduced, the MOSFET exits conduction and the current stops flowing. This makes it ideal for applications that require precise control over the on/off current switching.
Apart from its excellent performance, the 10119975-101LF also features built-in protection features such as over-temperature protection, short-circuit protection, and ESD protection, making it a suitable choice in high-risk applications. The device also features a fast switching speed to ensure that it can handle changes in current quickly and efficiently.
In summary, the 10119975-101LF is a robust, high-performance silicon nitride MOSFET transistor designed to offer the best possible performance for a wide range of applications. It features an optimized gate drive, improved MOSFET design, and built-in protection features for reliable operation in a variety of applications, such as battery management, motor control, and digital/analog conversion. The device also has an excellent thermal performance and fast switching speed, allowing it to efficiently and reliably handle changes in current.
The specific data is subject to PDF, and the above content is for reference
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