10130419-2030011LF Allicdata Electronics
Allicdata Part #:

10130419-2030011LF-ND

Manufacturer Part#:

10130419-2030011LF

Price: $ 1.04
Product Category:

Uncategorized

Manufacturer: Amphenol FCI
Short Description: DDR4 288P TH ASSY
More Detail: N/A
DataSheet: 10130419-2030011LF datasheet10130419-2030011LF Datasheet/PDF
Quantity: 1000
1960 +: $ 0.94083
Stock 1000Can Ship Immediately
$ 1.04
Specifications
Series: *
Part Status: Active
Description

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10130419-2030011LF is a type of electrical component that serves various functions across various applications. In electronics, solid-state device field-effect transistors (FETs) are used as switches, modulators, amplifiers, and signal processors, so they can be found in many consumer electronic devices. They are also commonly used in industrial and automotive systems.

The 10130419-2030011LF is a Field Effect Transistor (FET), which is a type of semiconductor device. It is composed of three terminals – gate, source, and drain – and is used to modulate and control the flow of electric current in low-voltage applications. The term “field effect” refers to the change in conductivity due to a voltage applied to the gate terminal, which is typically less than 5V. Through this voltage, the channel between the source and drain terminals can be either opened or closed, depending on the polarity of the voltage applied.

The 10130419-2030011LF’s main application is as a signal processor, acting as a variable resistor that is controlled by varying a voltage or current. It can be used to amplify and strengthen a signal, or to attenuate a signal to a certain level. Furthermore, it can be used as a voltage regulator, in which the drain voltage is set by adjusting the voltage on the gate terminal. It is also sometimes used as a voltage follower, wherein the output voltage is equal to the input voltage applied to the gate terminal.

The working principle of the 10130419-2030011LF is based on the concept of a depletion layer, which is a region of charge where the majority carriers are depleted due to injection of holes or electrons within the gate region. When the gate voltage is applied, the depletion region increases its boundaries, as the distance between source and drain becomes larger. This in turn reduces the current flowing through the channel between source and drain and makes the overall transistor more resistive. Conversely, when a negative voltage is applied to the gate, the depletion layer decreases and the amount of current through the channel increases, thus making it less resistive.

In summary, the 10130419-2030011LF is a type of field effect transistor that is used in various applications, such as signal processors, amplifiers, voltage regulators, and voltage followers. The working principle behind this component is based on the concept of a depletion layer, which is affected by the voltage applied to the gate terminal. This voltage can be used to modulate and control the flow of electric current, thus making the component extremely useful and versatile.

The specific data is subject to PDF, and the above content is for reference

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