10A060 Allicdata Electronics
Allicdata Part #:

10A060-ND

Manufacturer Part#:

10A060

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS RF BIPO 21W 3A 55FT-2
More Detail: RF Transistor NPN 24V 3A 1GHz 21W Stud Mount 55FT
DataSheet: 10A060 datasheet10A060 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 24V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): --
Gain: 8dB ~ 8.5dB
Power - Max: 21W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 5V
Current - Collector (Ic) (Max): 3A
Operating Temperature: 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT
Description

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The 10A060 RF bipolar junction transistor (BJT) is a general-purpose commonly used type of transistor used in a variety of applications. BJTs are widely used in switching, linear amplifiers and nowadays, are essential components in a variety of sensitive analog circuits, such as radio frequency (RF) applications.

A BJT consists of three terminals, the emitter, base, and collector. BJTs are configured by connecting two of the three terminals through a circuit, and the remaining single terminal is floating in the air. As the current flows between the two connected terminals (collector and emitter) through the base terminal, a BJT successfully amplifies the input signal applied by means of controlling the current flowing in one direction by means of controlling the current flowing in the opposite direction.

10A060 RF BJTs have a fairly low noise level, small size and low cost, making them perfect for high frequency electronic circuits. 10A060 BJT devices are usually directly mounted on or connected to the surface of boards and can be used to amplify signals ranging from low frequencies up to several hundred megahertz. This feature makes BJTs especially attractive for use in high frequency sensitive electronics, like radio receivers, signal base stations, and pulse RF systems, where high frequency oscillations with wide frequency band switching times need to be implemented.

In addition, 10A060 BJT components can also be employed in switches and interface designs; they are also used in low-noise amplifiers to improve signal-to-noise ratio. The high current gain of BaDa configured BJTs allows for excellent linearity in amplifier designs, but their ability to suppress spikes and distortions prior to transmitting a signal keeps the applications for these components expanding. 10A060 BJTs are also popular in developing test and measurement systems, as they prove to be reliable and cost-effective components.

The underlying working principle of BJTs can be easily explained. To illustrate, a 10A060 BJT consists of two main elements: an emitter and a collector. An electric current is applied to the base terminal, which is connected to the emitter. This emitter then carries a small portion of the current, which is amplified by the collector, resulting in a significantly higher current at the collector. This amplified current is then filtered through a base, and eventually reaches the collector terminal. In this configuration, the base terminal acts as an electronic valve, controlling the amount of current entering and exiting the collector, allowing the current to either increase or decrease depending on the amount of current at the base.

In conclusion, 10A060 RF BJTs are competent components for most RF and other high frequency application, with the advantage that it can amplify signals ranging from low frequencies up to several hundred megahertz. This gives them a versatile application field, from amplifiers to switches, from test and measurement systems to pulse RF systems. Its design is highly praised for its cost-effectiveness and reliability, having the potential to be employed in a variety of applications. ​

The specific data is subject to PDF, and the above content is for reference

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