11AA080T-I/TT

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	8Kb (1K x 8)
Clock Frequency:	100kHz
Write Cycle Time - Word, Page:	5ms
Memory Interface:	Single Wire
Voltage - Supply:	1.8 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	11AA080

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Introduction to Memory 11AA080T-I/TT and its Application Field

Today, memory devices seem to be ubiquitous in our modern daily lives. From the computers, smartphones and other high-tech gadgets to the systems and systems such as computers, networks and communication systems, memory devices have an important role to play in them. Among them, the 11AA080T-I/TT memory is one that\'s widely used in these systems.

What is the 11AA080T-I/TT?

The 11AA080T-I/TT is a memory device that is used in many applications, especially in those memory-intensive projects. This device is built around a nonvolatile technology, known as SuperFlash Flash. SuperFlash Flash is a high-performance NAND flash memory technology developed by SST (Silicon Storage Technology, Inc.). It includes an embedded ECC (error correction code) that allows it to detect and correct up to two bits of data error, as well as to prevent soft errors and shock-proof data operations.The 11AA080T-I/TT is a 16K-bit memory device with an organization of 128Kx8-bit. It has a two-wire serial interface that supports up to 128K address space and can support both serial and parallel writing modes. It also includes a built-in voltage detector that automatically powers down when the supply voltage drops below 1.2V to guard against accidental data loss. Furthermore, this device has a lower power consumption than traditional technologies, and is designed for a wide operating temperature range, from -40 to +85 degrees C.

Application Field of 11AA080T-I/TT

The 11AA080T-I/TT has a wide range of applications in many areas, including consumer electronics, automotive, industrial, and graphics. In consumer electronics, this memory device is ideal for designs with memory-intensive applications such as set-top boxes, digital cameras, and music players. In automotive applications, the 11AA080T-I/TT can be used in engine control units, body control modules, and other systems requiring reliable data storage. It is also capable of high speed and rapid data access which makes it a great choice for memory-intensive applications such as navigation systems, instrument clusters, and in-dash multimedia systems.For industrial applications, the 11AA080T-I/TT is well-suited for applications such as industrial controllers, data loggers, and handheld terminals. With its robust ECC and enhanced voltage detection, this device is ideal for applications in harsh and demanding environments.Finally, the 11AA080T-I/TT is also suitable for graphics applications such as image processing, 3D graphics, and video. With its high data transfer speeds and scalability, it can be used in graphics-intensive applications.

Working Principle of 11AA080T-I/TT

The 11AA080T-I/TT works on the principle of synchronous NAND flash. This type of memory device uses 2-bit ECC (error correction code) technology to detect and correct two bits of data error, as well as to prevent soft errors and shock-proof data operations. It works by creating a logical block of eight cells. Each cell stores one bit of data which can be accessed individually.To read data from the memory device, a host controller starts the data access by sending a command to the 11AA080T-I/TT. Upon receiving the command, the device returns the ECC data and the requested data. The ECC data is checked first to ensure that the stored data is correct. If the ECC data is valid, the requested data is received and processed.To write data to the memory device, the host controller sends a command to spell out the write operation, along with the data to be written. The 11AA080T-I/TT then stores the data in the corresponding cells and generates the appropriate ECC to check its correctness. The result is checked and either accepted or discarded. The ECC data is then written to the memory along with the data.

Conclusion

The 11AA080T-I/TT memory device is a reliable, high-performance memory device capable of performing in memory-intensive applications across many different application fields, from consumer electronics to automotive to industrial and more. It runs on a synchronous NAND flash technology and has built-in ECC and voltage detection features. All of these features make the 11AA080T-I/TT an ideal choice for many applications.

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