120NQ040R-1 Allicdata Electronics
Allicdata Part #:

120NQ040R-1SMC-ND

Manufacturer Part#:

120NQ040R-1

Price: $ 19.32
Product Category:

Discrete Semiconductor Products

Manufacturer: SMC Diode Solutions
Short Description: DIODE SCHOTTKY 40V 120A PRM1-1
More Detail: Diode Schottky 40V 120A Chassis Mount PRM1-1 (Half...
DataSheet: 120NQ040R-1 datasheet120NQ040R-1 Datasheet/PDF
Quantity: 1000
594 +: $ 17.39040
Stock 1000Can Ship Immediately
$ 19.32
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 120A
Voltage - Forward (Vf) (Max) @ If: 610mV @ 120A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 10mA @ 40V
Capacitance @ Vr, F: 5200pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: PRM1-1 (Half Pak Module)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The 120NQ040R-1 Diode is one of the most popular diodes used in many electronic applications. It is part of the Rectifiers – Single category and is commonly used in electrical power supplies and in AC-DC convertors. The type of diode utilized is a Schottky barrier diode.

This type of diode is a high-speed diode, characterized by its low forward voltage drop and high switching speed. Aside from its uses in AC-DC converters and power supplies, it is also used in memory protection and low voltage drop applications in vehicle engine control systems, measurement and test equipment and alternators.

The device is categorized as a Schottky barrier diode and operates by passing current in forward direction and blocking it in reverse direction. It is essentially composed of two metal electrodes which are purposely formed to produce a discretely rectifying surface at the interface with an insulating layer referred to as dielectric.

In a Schottky diode, the passage of current is controlled by a semiconductor diode, as a result of a very thin dead layer locating at the metallic region junction with the semiconductor. Frequently, semiconductor materials like silicon are chosen for constructing the junction. The external environment additionally affects the performance of the Schottky diode.

The 120NQ040R-1 is recommended for up to 40V applications. It has a reverse circuit current leakage of up to 1 ma at rated breakdown voltage, a maximum instantaneous forward current of 100 A at an ambient temperature of 80 degrees Celsius, a short reverse recovery time and a low forward voltage drop. It also has an internal resistance of at most 1.7 mA and an on-state resistance of 0.01 ohms.

The body of the device is constructed with an epoxy material that adds to the high heat dissipation potential of the device. It functions as an over-temperature device, controlling the amount of current directed through the device. This protects it from damage due to sudden voltage surges. The casing of the device is composed of a flat terminal that provides a secure connection and is further protected from vibration or movement.

Due to its advantages in terms of high speed and low forward voltage drop, the 120NQ040R-1 is a popular choice for applications in automotive systems and AC-DC power supplies. It is a reliable and robust component and is usually specified in popular designs. Its name reflects its specifications, with ‘NQ’ indicating the product family, ‘040’ indicating the maximum blocking voltage, and ‘R-1’ indicating the amount of current leakage at a rated voltage. Its specifications make it ideal for use in many electronic systems.

The specific data is subject to PDF, and the above content is for reference

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