1214-150L Allicdata Electronics
Allicdata Part #:

1214-150L-ND

Manufacturer Part#:

1214-150L

Price: $ 252.79
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS BIPO 55ST-1
More Detail: RF Transistor NPN 65V 15A 1.2GHz ~ 1.4GHz 320W Cha...
DataSheet: 1214-150L datasheet1214-150L Datasheet/PDF
Quantity: 1000
10 +: $ 229.81300
Stock 1000Can Ship Immediately
$ 252.79
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): --
Gain: 7.15dB ~ 8.7dB
Power - Max: 320W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST-1
Supplier Device Package: 55ST-1
Description

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The 1214-150L is a transistor that is a member of the bipolar junction transistors (BJT) family and is classified as an RF transistor. This specific type of transistor is used for a variety of different applications. This article will discuss the application field and working principle of the 1214-150L.

Application Field of 1214-150L

The 1214-150L is used in small and compact RF amplification, especially if high-frequency gain is needed. It is also useful in RF low power switching applications, radio frequency gain control loops, and low noise amplifier designs. In addition, it can be used as a driver transistor in order to drive power buffer transistors or other components such as antennae, filters, and radiators.

The 1214-150L transistor is also suitable for use in a variety of wireless communications applications, such as wireless modems, wireless data networks, wireless local area networks (WLAN), wireless LANs (WiFi) and Bluetooth applications.

This transistor can also be used in radar and navigation systems, as well as in microwave communications equipment. In addition, it can also be used in aircraft, ships, and spacecraft as part of their communication equipment.

Working Principle of 1214-150L

The 1214-150L transistor is based on the bipolar junction transistor (BJT). A BJT is a type of transistor that consists of three terminals. Two of the terminals, known as the base and the collector, form a layer of semiconductor material and the third terminal, known as the emitter, is placed on a heavily doped region of the semiconductor material.

When a current is applied to the base terminal, it known as the base current. This base current generates holes and electrons in the semiconductor material and they become mobile charge carriers. As a result, an electric current can flow between the collector and emitter. The flow of current is known as the collector current and it is proportional to the size of the base current.

The 1214-150L is an RF transistor, which means that it is designed to work at higher frequency than regular BJTs. This is achieved by using a higher breakdown voltage, which allows it to work with a wider range of frequencies. The transistor also has a higher gain than a regular BJT, which allows it to amplify higher frequency signals more effectively than a regular BJT.

Conclusion

The 1214-150L is a type of RF transistor that is suitable for use in a wide range of applications. It can be used in RF amplification, low power switching, low noise amplifier designs and other wireless communication systems. The transistor is based on the bipolar junction transistor and is designed to work at higher frequencies with a higher gain than a regular BJT.

The specific data is subject to PDF, and the above content is for reference

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