1214-370M Allicdata Electronics
Allicdata Part #:

1214-370M-ND

Manufacturer Part#:

1214-370M

Price: $ 307.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS RF BIPO 600W 25A 55ST1
More Detail: RF Transistor NPN 75V 25A 1.2GHz ~ 1.4GHz 600W Cha...
DataSheet: 1214-370M datasheet1214-370M Datasheet/PDF
Quantity: 1000
10 +: $ 279.33400
Stock 1000Can Ship Immediately
$ 307.27
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): --
Gain: 8.7dB ~ 9dB
Power - Max: 600W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 25A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST
Supplier Device Package: 55ST
Description

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1214-370M Application Field and Working Principle

The 1214-370M is a high performance radio frequency (RF) bipolar junction transistor (BJT). It is a three-terminal active device with a gain bandwidth of 16 MHz to 8 GHz and good linearity performance up to 6 GHz, making it suitable for a variety of applications in the upper VHF, UHF, and microwave ranges.

Features

  • High gain at low frequency
  • High power gain at higher frequency
  • Low power consumption
  • Good linearity performance
  • High speed switching
  • Simple design and fabrication

Applications

The1214-370M is widely used in high frequency applications such as radio transmitters, receivers, and amplifiers. It can also be used in high frequency power amplifiers and RF mixing circuits. For example, the 1214-370M can be used in radar and communication systems, satellite television receivers, radio broadcast transmitters and receivers, and radio frequency identification (RFID) applications. Additionally, the 1214-370M can be used in active antennas, bandpass filters, power amplifiers and oscillators.

Working Principle

The 1214-370M is a three-terminal semiconductor device that consists of a p-type base and an n-type emitter and collector. When the base and collector are forward biased, electrons pass from the emitter to the collector via the base, forming a current gain, or amplification. When the base and collector are reverse biased, it reduces the output current, resulting in a lower amplification.

The 1214-370M has a high current gain, or hFE, which is the amplification of the output current relative to the input current. The hFE of the 1214-370M ranges from 30 to 48 for a base current of 0.1 mA to 0.5 mA, respectively. Additionally, the 1214-370M has a high power gain and a low power consumption which makes it an ideal choice for high frequency applications.

The 1214-370M is also known for its high linearity performance. Linearity is the ability of a signal to remain unchanged when amplified or compressed. The 1214-370M provides a good signal-to-noise ratio and distortion-free operation up to 6 GHz.

Conclusion

The 1214-370M is a high performance radio frequency bipolar junction transistor (BJT) with a gain bandwidth of 16 MHz to 8 GHz. It is suitable for a variety of RF applications such as radar and communication systems, satellite television receivers, radio broadcast transmitters and receivers, and RFID applications. The 1214-370M has a high current gain, power gain and low power consumption, making it an ideal choice for high frequency applications. Additionally, it provides good linearity performance and distortion-free operation up to 6 GHz.

The specific data is subject to PDF, and the above content is for reference

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