Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	50V
Frequency - Transition:	1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f):	--
Gain:	7dB
Power - Max:	175W
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 1A, 5V
Current - Collector (Ic) (Max):	8A
Operating Temperature:	200°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	55AW
Supplier Device Package:	55AW

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Introduction

The 1214-55 transistor is a bipolar junction transistor (BJT) that operates in the radio frequency (RF) range. It is a three-terminal semiconductor device that amplifies signals. This type of transistor is designed for high-frequency applications where linearity and gain control are important. Therefore, it is often used in radio transmissions, communication systems, and other radio-frequency applications.

Characteristics of 1214-55

The 1214-55 transistor is an NPN (Negative plate of Nitride) type, with a collector-emitter voltage of 55V. It has an operating temperature range from -55 to +150 degrees Celsius. Additionally, this device has a power gain of 11.2dB and exhibits low-noise characteristics. It also has a low-state current of 80mA and a switching time of 18ns.

Application Fields and Working Principle

The 1214-55 is highly suitable for use in a wide range of applications, such as air traffic control, mobile communication systems, satellite receivers, electro-optic display systems, and navigation systems. It has high dynamic range and low current consumption, which makes it an ideal choice for these applications. Additionally, its high gain and low-noise characteristics make it well suited for use in high-fidelity audio systems. In general, a bipolar junction transistor works as an amplifier by amplifying the input current or voltage. Essentially, it has three pins: the base, collector, and emitter, which form a junction between two diodes. The base-emitter junction can control the flow of electrons between the collector and the emitter. Therefore, if the base current is increased, the collector current is also increased. This change in current is the basis of the amplification. Moreover, the 1214-55 transistor has a variety of features that make it particularly suitable for RF applications. Its high gain and low-state current consumption make it very efficient in amplifying small signals. Additionally, it has an increased linearity at high frequencies, which makes it perform better than other transistors. Furthermore, it has a low-noise feature that helps reduce distortion caused by external interference and noise.

Conclusion

The 1214-55 transistor is a bipolar junction transistor designed for radio frequency applications. Its high gain and low-noise characteristics make it well suited for use in radio transmissions, communication systems, and other radio-frequency applications. Additionally, its high dynamic range and low current consumption make it ideal for applications such as air traffic control, mobile communication systems, satellite receivers, and navigation systems. Its increased linearity at high frequencies and its low-state current consumption further make it a suitable choice for high-fidelity audio systems.

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