| Allicdata Part #: | WM21671-ND |
| Manufacturer Part#: |
1300545003 |
| Price: | $ 35.32 |
| Product Category: | Uncategorized |
| Manufacturer: | Molex, LLC |
| Short Description: | M12-4P-FE.REC/RJ45-M-1.0M-PVC |
| More Detail: | N/A |
| DataSheet: | 1300545003 Datasheet/PDF |
| Quantity: | 20 |
| 1 +: | $ 32.11110 |
| 10 +: | $ 30.21980 |
| 25 +: | $ 29.27560 |
| 50 +: | $ 27.38670 |
| 100 +: | $ 25.87570 |
| 250 +: | $ 25.12030 |
| Series: | * |
| Part Status: | Active |
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The 1300545003 is a metal Oxide Semi-Conductor Field Effect Transistor (MOSFET) that is widely used in a variety of electronic applications. It is a three-terminal, voltage controlled device with excellent switching characteristics. In normal operation, the transistor is in an OFF condition, in which the gate to source voltage is less than the threshold voltage. When the gate voltage is increased beyond the threshold voltage, the transistor switches on, allowing current flow through the channel. This type of transistor has become especially popular in many electronic systems due to its fast switching times, low gate capacitance, and relative simplicity when compared to bipolar transistors.
The 1300545003 is used in a variety of switching applications and power conversion circuitry. Switches are used in systems such as amplifier circuits, audio effects, and frequency control circuits. The transistors can also be used in high-power analog applications such as switched mode power supplies, motor control circuits, and DC/DC converters. In these types of applications, the fast switching speeds and low gate charge of the 1300545003 make them a preferred choice for designers.
The working principle of the 1300545003 follows the same general principles as any metal-oxide-semiconductor field effect transistor (MOSFET). A p-type semiconductor substrate is coated with an insulated gate, the inside of which is connected to the gate or control terminal of the device. When a voltage is applied to the gate, a so-called depletion layer forms between the gate and the substrate, reducing the resistance between the drain and source terminals. This reduction of resistance is what turns the transistor on, allowing electrical current to flow.
When the gate voltage is higher than the threshold voltage, the transistor is in an ON state, and it will allow current to flow between the drain and source terminals. When the gate voltage is decreased below the threshold voltage, the transistor is in an OFF state and the drain-source resistance will be very high, effectively blocking any current from flowing between the terminals.
The 1300545003 transistors are also commonly used in logic circuits, such as logic gates, gates and multiplexers, and counters. The transistor divides the circuit into two sections, one in which the current can flow and one in which current cannot flow. This allows for the creation of logic gates, which are basic components of any digital electronic circuit.
In addition, many other types of circuits benefit from the use of the 1300545003 MOSFET. These devices are used in oscillators, power regulators, peak detectors, rectifiers, logic inverters, signal amplifiers, operational amplifiers, multiplexers, and switching circuits. The device has also been used in analog-to-digital converters, digital-to-analog converters, audio amplifiers, RF amplifiers, delay lines, and signal multipliers.
Overall, the 1300545003 MOSFET transistors are a versatile and reliable semiconductor device that is widely used in a variety of electronic applications. Its fast switching speeds, low gate charge, and relative simplicity make it an ideal choice for designers. This type of transistor is essential for any modern electronic system, and its many benefits make it invaluable for a vast array of applications.
The specific data is subject to PDF, and the above content is for reference
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DIODE GENERAL PURPOSE TO220
CB 6C 6#16 SKT RECP
CA08COME36-3PB-44
CA-BAYONET
CB 6C 6#16S SKT PLUG
CAC 3C 3#16S SKT RECP LINE
1300545003 Datasheet/PDF