150D824X9035A2T

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Tantalum capacitors are an important non-polarized type of capacitor. They are composed of two layers of tantalum powder that are sintered together to form an anode and cathode. The anode is usually made of a conductive material such as manganese dioxide. The cathode is typically an electrolyte such as sulfuric acid or potassium hydroxide.

The 150D824X9035A2T belongs to this family of components and is has an SMD construction which makes it ideal for high density packaging. This design also ensures that the component is highly reliable and has good power dissipation characteristics. The component is made up of a tungsten and titanates combined to form a porous anodic layer. It also has a cathode layer which is typically an electrolyte.

The 150D824X9035A2T is a standard type of capacitor which means it is designed to be general purpose. This makes it suitable for a wide range of applications, such as filtering, bypassing, and energy storage. It has an operating temperature range of -55ºC to +85ºC which means it can be used in extreme temperature environments.

The 150D824X9035A2T is notable for its low leakage current and good ESR performance. It is also highly resistant to vibrations and shocks meaning it is reliable even when subjected to harsh conditions.

The working principle of the 150D824X9035A2T is fairly simple. The component stores charge by the virtue of its anode layer, which allows it to create an electric field between its two layers. When a voltage is applied across the component, charge is stored in the anode layer. The amount of charge stored is dependent on the capacitance of the component, also known as the size of the anode.

In summary, the 150D824X9035A2T is a tantalum capacitor with an SMD packaging that is well suited for high-density applications. It has a wide operating temperature range and is highly reliable due to low leakage current and good ESR performance. The component stores charge with the aid of its anode layer, creating an electric field between the two layers.

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