1KSMBJ82A Allicdata Electronics
Allicdata Part #:

1KSMBJ82A-ND

Manufacturer Part#:

1KSMBJ82A

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Littelfuse Inc.
Short Description: TVS DIODE 70.1V 113V DO214AA
More Detail: N/A
DataSheet: 1KSMBJ82A datasheet1KSMBJ82A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 113V
Supplier Device Package: DO-214AA (SMBJ)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive, Telecom
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Current - Peak Pulse (10/1000µs): 8.8A
Series: 1KSMBJ
Voltage - Breakdown (Min): 77.9V
Voltage - Reverse Standoff (Typ): 70.1V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS (Transient Voltage Suppressor) diodes are a type of semiconductor device designed to protect sensitive electronic components from voltage transients induced by external or internal sources.
The success of these devices depends on the ability to react quickly and effectively to ever-changing conditions in real-world environments, making them a critical part of effective protection solutions.The 1KSMBJ82A TVS diode is a key component for protecting sensitive electronics from voltage transients. This device is designed to offer superior ESD (Electrostatic Discharge) protection and minimal reverse leakage current at a wide range of operating and power levels. It is constructed with a simple two-terminal configuration and is ideal for a variety of applications, including industrial, automotive, medical, and consumer electronics.

The 1KSMBJ82A TVS diode is designed to absorb transients and limit their effects on other components. It is manufactured using a high-performance silicon epi-structure and the device is optimized for ESD protection to the latest international standards. It is capable of handling up to 130 volts and can absorb ESD pulses up to 15A in the standard 8/20 microsecond waveforms.

The principle of operation of the 1KSMBJ82A is relatively simple and can be understood by examining the internal structure and design of the device. At its core, the device is composed of a PN junction formed by a diode connected in series with a Zener diode. When a transient occurs, the PN junction in the device breaks down, allowing current to flow in either direction. This effectively “clamps” the voltage to a maximum limit, which is known as the breakdown voltage. This prevents the voltage from exceeding the limit of the components that the device is protecting, thus preventing damage.

In addition, the device also has a positive temperature coefficient, which ensures that the breakdown voltage increases as the ambient temperature rises. This is important in order to protect the connected components from abnormally high voltage levels. The 1KSMBJ82A also features an improved dynamic clamping response time, which means that it can react quickly and effectively to changing conditions in real-world applications.

The 1KSMBJ82A is a reliable and cost-effective device for protecting sensitive electronics from voltage transients. It is designed to offer superior ESD protection and minimal reverse leakage current at a wide range of operating and power levels. It is ideal for a variety of applications, including industrial, automotive, medical, and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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