1MS08017E32W31490NOSA1 Discrete Semiconductor Products

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1MS08017E32W31490NOSA1 application field and working principle

The 1MS08017E32W31490NOSA1 is a high voltage, high speed insulated gate bipolar transistor (IGBT) module designed to provide power electronic solutions for demanding applications. It has an operating voltage of 900-1200V and a short reverse blocking capability. It is an ideal choice for a variety of power supplies, motor drives, and lighting applications.

Application field

The 1MS08017E32W31490NOSA1 can be used in a wide range of applications such as solar inverters, UPS, servo drives, welding machines, HVAC systems, voltage stabilizers, and LED lighting. It is also suitable for applications where fast switching is required such as welding and contactors. Its superior performance and operating characteristics make it well suited for fast-switching applications.

Working Principle

The 1MS08017E32W31490NOSA1 is based on an IGBT power switching design. The module combines an insulated gate bipolar transistor (IGBT) and an anti-parallel diode in a single package. The IGBT is designed to provide fast switching and efficient power control. It is triggered by applying a DC voltage to the gate terminal. When the gate voltage is low, the IGBT is off and the diode is conducting current. When the gate voltage is high, the IGBT is on and the diode is blocking current.

The 1MS08017E32W31490NOSA1 can be used in applications where high efficiency, high power density, and fast switching speed are required. It is capable of delivering up to 3300 A/cm² in a compact footprint. It also has excellent EMC and ESD immunity, making it suitable for a variety of applications.

Conclusion

The 1MS08017E32W31490NOSA1 is an ideal choice for applications requiring high efficiency and high power density with fast switching response speeds. It is capable of operating at 900-1200V and delivering up to 3300A/cm². It is well suited for a variety of applications such as solar inverters, UPS, servo drives, and LED lighting.

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