1N4120 (DO35) Allicdata Electronics
Allicdata Part #:

1N4120(DO35)-ND

Manufacturer Part#:

1N4120 (DO35)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 30V 400MW DO35
More Detail: Zener Diode 30V 400mW ±5% Through Hole DO-35
DataSheet: 1N4120 (DO35) datasheet1N4120 (DO35) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 30V
Tolerance: ±5%
Power - Max: 400mW
Impedance (Max) (Zzt): 200 Ohms
Current - Reverse Leakage @ Vr: 10nA @ 22.8V
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Base Part Number: 1N4120
Description

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Diodes play a key role in many types of electronic circuits. Among them, one of the most commonly used types of diodes is the Zener, which consists of a single p–n junction. Zener diodes are primarily used to perform Voltage regulation, where they prevent a voltage from exceeding a predetermined level. 1N4120 is a popular Zener diode, with a breakdown voltage of 12V and maximum power rating of 500mW. It is a DO-34Z package, with a nominal breakdown voltage of 10.3V.

1N4120 diodes can be found in a wide variety of electronic devices, ranging from television receivers to power supplies. They are especially useful in automotive systems, such as those used in car starters and alternators. They are used in voltage regulators to stabilize the voltage in a circuit and help prevent overvoltage conditions that can damage sensitive components. They are also used in voltage multipliers, voltage regulators, and precision rectifiers, among other applications.

The working principle of a Zener diode is based on its reverse breakdown voltage. When a zener diode is exposed to a reverse bias voltage greater than its breakdown voltage, it allows current to flow in the reverse direction due to the electric field created in the junction. This current creates a voltage drop across the diode and a regulated voltage is maintained.

1N4120 diodes are constructed using an N-type semiconductor material and a P-type semiconductor material. When the anode of a 1N4120 diode is connected to a positive voltage source, the majority of electrons in the N-type material become mobile, while majority of holes in the P-type material become mobile. Consequently,holes move towards the anode and electrons move towards the cathode, creating inversion layer and charge carriers.

The inversion layer then acts as a resistive barrier to the current, reducing the voltage across the diode and allowing the diode to operate under a constant voltage. When the applied voltage exceeds the breakdown voltage, the inversion layer breaks down and the diode starts to conduct. This phenomenon is known as a breakdown voltage and it is the basis of Zener diode operation.

1N4120 diodes are designed to maintain a constant breakdown voltage over a wide temperature range. They have low reverse leakage current, low zener impedance and high thermal stability. They are also designed to protect against overvoltage conditions, such as those that may occur in automotive systems.

1N4120 diodes are a cost effective and reliable solution for voltage stabilization and overvoltage protection in a wide range of applications. They are widely used in automotive, industrial and consumer electronics applications. With their low power dissipation and high ruggedness, they are an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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