
1N4150TAP Discrete Semiconductor Products |
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Allicdata Part #: | 1N4150TAPGITB-ND |
Manufacturer Part#: |
1N4150TAP |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 50V 150MA DO35 |
More Detail: | Diode Standard 50V 150mA Through Hole DO-35 |
DataSheet: | ![]() |
Quantity: | 40000 |
10000 +: | $ 0.01588 |
30000 +: | $ 0.01429 |
50000 +: | $ 0.01270 |
100000 +: | $ 0.01191 |
250000 +: | $ 0.01058 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 150mA |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 200mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 100nA @ 50V |
Capacitance @ Vr, F: | 2.5pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Diodes come in many variations, but the most common is the single, which is used to regulate the direction of current flow. The 1N4150TAP diode is one such single diode that is widely used in a range of applications. It features a PN junction with a low on-state I-V curve, making it suitable for a wide range of devices.
The 1N4150TAP is designed for a variety of applications, such as providing protection against reverse battery connections and providing control for high power audio amplifiers. It is also often used for rectification and voltage regulation.
The 1N4150TAP is typically constructed from a silicon carbide PN junction diode. This type of diode is known for its high efficiency, low temperature coefficient, and low leakage current. It is also shock resistant and able to handle high temperatures.
The working principle of the 1N4150TAP is a variation of the rectification process. When it is forward biased, the current flow is directed by the PN junction, allowing the current to flow through the diode. The 1N4150TAP’s low on-state I-V curve makes it an ideal choice for rectification, as it allows for low resistance and therefore lower losses during the rectification process.
When the diode is reverse biased, the PN junction acts as a barrier, and no current is allowed to flow through the diode. This property makes the 1N4150TAP ideal for offering protection against reverse battery connections in applications such as car electrical systems.
The 1N4150TAP diode is also popular for use in voltage regulation applications because of its low forward voltage drop and low reverse leakage current. It can be used to regulate the flow of current between two points in an electrical circuit, allowing for the desired voltage to be maintained.
The 1N4150TAP is a versatile single diode that is suitable for many applications. It is extremely efficient, making it ideal for use in a wide range of devices. Its low on-state I-V curve allows it to be used for rectification, as well as offering protection against reverse battery connections. It is also effective at voltage regulation, making it a popular choice for many applications.
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