1N4154 Allicdata Electronics
Allicdata Part #:

1N4154MS-ND

Manufacturer Part#:

1N4154

Price: $ 0.97
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 35V 200MA DO35
More Detail: Diode Standard 35V 200mA Through Hole DO-35
DataSheet: 1N4154 datasheet1N4154 Datasheet/PDF
Quantity: 1000
667 +: $ 0.86822
Stock 1000Can Ship Immediately
$ 0.97
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
Speed: Small Signal =
Reverse Recovery Time (trr): 2ns
Current - Reverse Leakage @ Vr: 100nA @ 25V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C
Description

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The 1N4154 is a silicon switching diode. It is a member of the larger family of rectifier diodes, which are the most commonly used devices in switching electronics. Rectifiers are used to convert alternating current (AC) into direct current (DC) as part of a power supply circuit. The 1N4154 is a silicon switching diode which uses a small amount of forward voltage to switch a relatively small amount of current. It is widely used in low power switching and protection applications, such as switch-mode power supplies, portable electronics, and automotive applications.

The 1N4154 is a rectifier diode and is widely used for its unidirectional current-carrying capabilities. A rectifier diode has two essential functions: firstly, it passes a current in only one direction, also known as unidirectional current flow; secondly, it protects other components from current reverse-flow. To understand why this is important, we need to look at the structure of a rectifier diode.

At the atomic level, the structure of a rectifier diode is a combination of an anode and a cathode. These two poles are connected together in a semiconductor, which is in turn surrounded by a material called an insulator. In order for the current to flow through the diode, the anode and cathode must be charged. When the anode is positively charged and the cathode is negatively charged, the rectifier diode will allow the current to flow in one direction only. This is known as a forward bias and it is what enables the rectifier diode to act as a unidirectional current-carrying device.

In addition to enabling unidirectional current flow, the rectifier diode also protects other connected components from current reverse-flow. When the rectifier diode is in forward bias, it has a low resistance and allows the current to flow in one direction. When the device is in reverse-bias, its high resistance prevents the current from flowing in the opposite direction. This prevents the current from damaging other connected components.

The 1N4154 is an epitaxial silicon rectifier diode, which means it is formed directly upon a single-crystal substrate (the epitaxial layer). The major benefit of this structure is that it has a much lower forward voltage than other diodes of a similar size. This low forward voltage allows it to switch a relatively small amount of current, making it ideal for low power switching applications.

In summary, the 1N4154 is a single silicon rectifier diode which is widely used in low power switching and protection applications, such as switch-mode power supplies, portable electronics, and automotive applications. It has a low forward voltage which enables it to switch a relatively small amount of current, and it also protects other connected components from current reverse-flow.

The specific data is subject to PDF, and the above content is for reference

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