| Allicdata Part #: | 1N5337BE3/TR8-ND |
| Manufacturer Part#: |
1N5337BE3/TR8 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE ZENER 4.7V 5W T18 |
| More Detail: | Zener Diode 4.7V 5W ±5% Through Hole T-18 |
| DataSheet: | 1N5337BE3/TR8 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Voltage - Zener (Nom) (Vz): | 4.7V |
| Tolerance: | ±5% |
| Power - Max: | 5W |
| Impedance (Max) (Zzt): | 2 Ohms |
| Current - Reverse Leakage @ Vr: | 5µA @ 1V |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
| Operating Temperature: | -65°C ~ 150°C |
| Mounting Type: | Through Hole |
| Package / Case: | T-18, Axial |
| Supplier Device Package: | T-18 |
| Base Part Number: | 1N5337 |
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.Diodes are important components for circuit designs, and Zener diodes are essential for providing over-voltage protection and voltage regulation in electronic devices. The 1N5337BE3/TR8, a device set to a specific breakdown voltage, is a single Zener diode ideal for many applications. This article outlines the application fields and working principles of this component.
Application Fields of 1N5337BE3/TR8
The 1N5337BE3/TR8 is designed to provide over-voltage protection and voltage regulation for many circuits. The component has a high breakdown voltage ranging from 5.1V to 36V and a low temperature coefficient, making it suitable for applications in the industrial, computer, communication, consumer electronics and automobile industries.
The component can also be used in voltage regulation of electric power supply and controlling circuits, especially in general electronic circuits and electronic systems, such as measuring instruments, electric leakage protection systems, negative resistance circuits, DC stabilized power source and so on.
Attention should be paid to the maximum current ratings when performing the component in order to ensure a longer component life. The component can provide a continuous current of 200mA and a peak of UP to 1000mA, with maximum power dissipation of 350mW at the ambient temperature of 25℃ and a maximum reverse voltage of 36V.
Working Principle of 1N5337BE3/TR8
The 1N5337BE3/TR8 is manufactured with a special doping profile and a built-in special structure, so that it has much better temperature characteristics than ordinary Zener diodes. The component uses the PN junction, which carries the effect of electric field when the external voltage is greater than the built-in electric field and breaks down the junction, leaving electrons and holes in the band. This is the intrinsic mechanism for the Zener diode protection.
When the applied voltage increases to a certain value, the electric field reaches to the critical point and the diode is in breakdown state. But with the structure described above, the 1N5337BE3/TR8 can still keep normal when the current is not greater than a certain value.
Conclusion
The 1N5337BE3/TR8 is a single Zener diode with a breakdown voltage range from 5.1V to 36V and a low temperature coefficient. It is mainly used for over-voltage protection and voltage regulation in industrial, computer, communication, consumer electronics and automobile circuits. The component has a continuous current rating of 200mA and a peak of UP to 1000mA, and its working mechanism depends on a built-in special structure to keep it working in normal condition at current levels lower than a certain value.
The specific data is subject to PDF, and the above content is for reference
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1N5337BE3/TR8 Datasheet/PDF