1N5352BE3/TR12 Allicdata Electronics
Allicdata Part #:

1N5352BE3/TR12-ND

Manufacturer Part#:

1N5352BE3/TR12

Price: $ 1.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 15V 5W T18
More Detail: Zener Diode 15V 5W ±5% Through Hole T-18
DataSheet: 1N5352BE3/TR12 datasheet1N5352BE3/TR12 Datasheet/PDF
Quantity: 1000
3000 +: $ 1.25244
Stock 1000Can Ship Immediately
$ 1.39
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 15V
Tolerance: ±5%
Power - Max: 5W
Impedance (Max) (Zzt): 2.5 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 10.8V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: T-18
Base Part Number: 1N5352
Description

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A 1N5352BE3/TR12 diode is a single, axial-leaded, Zener diode, which is used to provide a constant, stable voltage in different types of applications. It is a silicon zener diode with a power rating of 1/2 watt and a breakdown voltage of 12 volts. The 1N5352BE3/TR12 is designed for semi-conductor applications in consumer electronics, computers, and other electronic equipment.

The 1N5352BE3/TR12 is constructed from a chip of either silicon or germanium, depending on the type of diode required. Each diode contains two lead terminals, a cathode and an anode, which are electrically connected to the chip. The cathode is typically marked on the bottom of the component with a black band.

The mechanism behind the 1N5352BE3/TR12\'s operation is known as the Zener effect. When an electric current is applied to the diode in forward bias, electrons are pushed out of the cathode and repel the holes in the valence band of the semiconductor chip. This creates a hole-electron pair, and the electric current is conducted through the junction.

When the diode is reversed biased and the voltage is increased, the electrons are drawn back into the cathode, and the holes rush towards the anode. This creates a section of the semiconductor chip with a higher concentration of electric charge, which is known as an electric field. This field creates a barrier and resists the increase of electric current. This phenomenon is known as the Zener effect, and prevents the voltage from increasing beyond a certain level, which is known as the Zener voltage.

The 1N5352BE3/TR12 is primarily used for protection of sensitive electronic components and for overvoltage clipping operations. In these applications, the diode is connected in reverse bias, with the anode terminal connected to a higher voltage than the cathode. This creates a reverse electric field in the diode, which prevents the voltage from exceeding the Zener voltage, thus protecting the component from electric surges.

It is also used in various semi-conductor applications, such as in diodes and transistors. In these applications, the 1N5352BE3/TR12 is used as a steering element, which is responsible for directing the electric current to the desired path. This is beneficial, as it increases the efficiency of the device, as well as eliminating the need for additional components.

The 1N5352BE3/TR12 is also found in various voltage regulator circuits. In these circuits, the diode is used to stabilise the output voltage, by limiting the maximum voltage to the Zener voltage. This reduces the power fluctuations, which makes the device more reliable and efficient.

The 1N5352BE3/TR12 has many applications and is widely used in various electronic components. Its Zener effect makes it an ideal choice for protection of sensitive components, as well as in semi-conductor and voltage regulator circuits. It is an important component, as it increases the efficiency and reliability of electronic devices.

The specific data is subject to PDF, and the above content is for reference

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