| Allicdata Part #: | 1N6329-ND |
| Manufacturer Part#: |
1N6329 |
| Price: | $ 6.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | ZENER DIODE |
| More Detail: | Zener Diode |
| DataSheet: | 1N6329 Datasheet/PDF |
| Quantity: | 1000 |
| 113 +: | $ 5.44582 |
| Series: | * |
| Part Status: | Active |
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The 1N6329 is a Zener diode, single type. It belongs to the category of diodes, and it is especially made for describing the characteristics of Zener diodes by using the parameters of voltage and reverse-leakage current. It is a semiconductor device that uses the two junction points as it is often applied in the voltage regulators.
A Zener diode is an electrical component, a diode that, when connected in reverse bias, allows the current to flow in the opposite direction of the standard voltage flow. Zener diodes can be used in various types of applications ranging from audio to power related electrical components. This type of diode is usually a small, low-power device and is often used as a voltage regulator, allowing to control the voltage level regardless of the current or load.
The main application of 1N6329 is as a voltage regulator. It is used to maintain a constant output voltage which is unaffected by variations in input voltage or load conditions, typically for engineering and electronic design applications. The 1N6329 is suitable for regulating digital, analog, and mixed-signal devices. It is also used as an efficient way to protect electrical devices from voltage overloads.
In addition to exhibiting these characteristic properties of a Zener diode, the 1N6329 is also capable of providing steadier and more accurate regulating of the voltage. It is characterised by low and stable power consumption, low off-state leakage current, and low dissipation factor and high stability.
The working principle of the 1N6329 is based on the properties of reverse-leakage current, which is the current that flows through it when it is reverse-biased. When it is reverse-biased, the electrons in the n-type material form a region of low resistance while the electrons in the p-type material form a high-resistance region. This allows current to flow in the opposite direction. The Zener breakdown of the 1N6329 occurs when the current is high enough to breakdown the junction eventually.
The 1N6329 also exhibits specific voltage characteristics dependent on the temperature, which leads to higher reverse current during the temperature variation. That is why it is important to consider temperature when designing a circuit. The temperature variation can result in a wider range of the Zener voltage than the nominal voltage.
The 1N6329 diodes are available in several packages for various type of mounting applications. The case material used for the packages is epoxy, with dimensions ranging from small to large depending on the application. The 1N6329 diode can handle up to 5 amps at peak and 700mW at steady-state forward circuit current with a temperature range of -65°C to +175°C.
In conclusion, the 1N6329 diode is a semiconductor device that belongs to the category of diodes and it is specifically designed to describe the characteristics of the Zener diodes. It is mainly used for voltage regulation and for providing a constant output voltage stable across the temperature variations. Its working principle is based on the properties of the reverse leakage currents. Thanks to its low and stable power consumption, low off-state leakage current, and low dissipation factor, the 1N6329 diodes are the ideal device for various applications, including audio, digital, analog, and mixed signal devices.
The specific data is subject to PDF, and the above content is for reference
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1N6329 Datasheet/PDF