1SMA5945HR3G

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A 1SMA5945HR3G is a diode, a type of semiconductor that plays a key role in power management applications. It is an epitaxial planar Zener diode with a wide range of characteristics, such as reverse-breakdown voltage, power dissipation, and block current. The device is designed for use in various applications that require precision supply-voltage regulation, high power-pulse handling, and the protection of sensitive circuit components from transient over-voltages.The 1SMA5945HR3G’s reverse breakdown voltage (VZ) at a temperature of 25℃ is 9.45V, and its +/- 10% tolerances are suitable for many power supply design applications. With a power dissipation rating of 400mW, the device can operate at currents higher than 1A. The instantaneous forward-voltage drop (VF) measure across the junction is very low, even at high currents, reducing the device’s power dissipation. The 1SMA5945HR3G also offers superior protection from transient overvoltage, as the VF remains below 1V even with current surges of up to 100A.The 1SMA5945HR3G’s low VF results from its structure. This diode is produced using single-piece planar epitaxial technology, which consists of a single-piece planar substrate surrounded by layers of doped and undoped semiconductors. This structure ensures superior thermal conductivity, which helps keep the diode’s temperature constant even at high currents. Moreover, the single-piece construction makes the device smaller and lighter than traditional diodes, allowing for a higher number of diodes to be packed into the same volume.The 1SMA5945HR3G’s working principle is based on the flow of electrons. Electrons in the material flow from the N-type region, through the P-type region, and then back to the N-type region. When a voltage is applied to the diode, the electrons are forced to reverse their direction and flow from the P-type region to the N-type region. This process is known as “reverse breakdown,” and it is responsible for the diode’s low VF and its capability to absorb large instantaneous overvoltages.In conclusion, 1SMA5945HR3G diodes offer a wide range of characteristics that make them ideal for use in power management applications. The device features a low VF and the capacity to absorb large instantaneous overvoltages, thanks to its single-piece planar epitaxial structure. This type of diode is also smaller and lighter than traditional diodes, allowing for higher packing densities. Finally, the diode’s working principle is based on electron flow, making it a reliable, robust, and long-lasting device.

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