1SMB5913BT3 Allicdata Electronics
Allicdata Part #:

1SMB5913BT3OSCT-ND

Manufacturer Part#:

1SMB5913BT3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 3.3V 3W SMB
More Detail: Zener Diode 3.3V 3W ±5% Surface Mount SMB
DataSheet: 1SMB5913BT3 datasheet1SMB5913BT3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 3.3V
Tolerance: ±5%
Power - Max: 3W
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 100µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Base Part Number: SMB5913
Description

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Diodes - Zener - Single

The 1SMB5913BT3 is a single, zener-type diode that is used in a range of applications. It is used to provide protection to active components (such as transistors, ICs and other discrete components) against voltage spikes and other transient events. It also serves as a current limiting device, providing an inexpensive alternative to an external protector or group of power resistors used to limit the amount of current in a circuit.

This type of diode is manufactured using a technical process called avalanche breakdown. Avalanche breakdown is a breakdown process that occurs when the built-in avalanche voltage of a semiconductor is exceeded. This breakdown process disrupts the internal structure of the diode, allowing for the passage of electrons. This process allows for the zener diode to have a negative resistance characteristic, which is ideal for regulating and reducing the amount of voltage that can pass through it.

The internal structure of the 1SMB5913BT3 is composed of a junction of a heavily doped p-type substrate and a mildly doped n-type region. When a voltage is applied across the diode, the electrons attracted to the anode travel across the junction and are discharged at its cathode. In this circumstance, the electrons are able to move in both directions, however, due to the attraction of the anode, the electrons will travel across the diode in one direction. It is in these conditions that the directional travelling of electrons is maintained.

The 1SMB5913BT3 is designed to be used in linear voltage regulators and voltage-clamping applications, as well as a variety of other applications. It can be used to limit the peak input voltage in high power electronics, such as AC/DC and DC/DC converters; it can also be used to prevent over-voltage failures when placed across input power lines. It can even be used to protect against undervoltage, overcurrent and overvoltage events.

The 1SMB5913BT3 is a reliable and efficient device. Its robust design ensures that it is able to withstand overvoltage, transients and other extreme conditions, whilst relying on a low forward operating voltage and a variety of operating temperatures. As such, it is an ideal solution for circuits that require reliable and effective voltage protection.

The specific data is subject to PDF, and the above content is for reference

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