Allicdata Part #: | 1SMB5937HM4G-ND |
Manufacturer Part#: |
1SMB5937HM4G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 33V 3W DO214AA |
More Detail: | Zener Diode 33V 3W ±5% Surface Mount DO-214AA (SMB... |
DataSheet: | 1SMB5937HM4G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.06480 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 33V |
Tolerance: | ±5% |
Power - Max: | 3W |
Impedance (Max) (Zzt): | 33 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 25.1V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
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1SMB5937HM4G is a single type of zener diodes, and is widely used in commercial and industrial applications. As the name implies, 1SMB5937HM4G diodes are composed of one diode—allowing for a single-polarity differential scheme.
The 1SMB5937HM4G diodes are positioned in the market as medium signal-duty parts, ideal for applications ranging from digital signal lines to broad-band amplifiers and relay circuits. The 1SMB5937HM4G diodes boast a low capacitance of 1.7pF (maximum), allowing for a wide range of design possibilities.
1SMB5937HM4G diodes feature a maximum rated Reverse Voltage of 3.6 V, with an approximate Maximum Zener Voltage of 5.3V. The diodes have the distinction of being hermetically sealed, which allows for increased reliability in industrial applications and makes them well-suited for high-temperature, rigorous conditions.
In addition, 1SMB5937HM4G diodes have a Maximum Power Dissipation of 375mW, which allows for robust and reliable operation in most commercial and industrial applications. The diodes also have an impressive Peak Pulse Power rating of 1250 W, so they are well-suited for handling surges and voltage spikes.
The diodes’ working principle is relatively simple. In regards to reverse bias, the diode operates by providing a very low capacitance path between the anode and cathode; while in forward bias,the diode provides a low resistance path, which allows it to pass current. This low resistance means that the 1SMB5937HM4G diodes can handle high current without being damaged.
The 1SMB5937HM4G diodes have a wide range of applications. The hermetic seal allows them to stand up well to high-temperature and harsh conditions, making them a reliable choice for industrial operations. They are also used inDC/DC conversion, voltage regulation circuits, and protection circuits of IC’s and other circuits.
Furthermore, 1SMB5937HM4G diodes are used in switching power supplies, UPS systems, relay circuits, and RF circuits. The versatility of these diodes means that they can be used for both commercial and industrial applications.
In summary, the 1SMB5937HM4G diodes are used in a wide range of applications, from digital logic signals to broad-band amplifiers. The hermetic seal makes them suitable for use in very tough environments, while their low capacitance and high pulse power ratings mean they are ideal for managing voltage irregularities. The working principle of the diodes is relatively simple, and they provide a low resistance path which is ideal for handling large currents without being damaged.
The specific data is subject to PDF, and the above content is for reference
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