1SMB5943 R5G Allicdata Electronics
Allicdata Part #:

1SMB5943R5G-ND

Manufacturer Part#:

1SMB5943 R5G

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 56V 3W DO214AA
More Detail: Zener Diode 56V 3W ±5% Surface Mount DO-214AA (SMB...
DataSheet: 1SMB5943 R5G datasheet1SMB5943 R5G Datasheet/PDF
Quantity: 1000
5100 +: $ 0.06480
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 56V
Tolerance: ±5%
Power - Max: 3W
Impedance (Max) (Zzt): 86 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 42.6V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Description

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The 1SMB5943 R5G is part of the Zener single diode family. When the device is operating, it changes the state of the crystal structure, creating a barrier that does not let current pass through, thereby preventing electrical overloads.

The diode is used in several transistor-based circuit applications, including high-voltage switching, voltage clamping and transient suppression. It is made up of a series of PN-junction diodes connected in parallel. This layout supports high-current operation, as well as instantaneous peak reverse voltages. The PN junction also provides a higher dynamic impedance across the device\'s junction, aiding in protecting the device from voltage transients.

The device\'s Schottky diode structure, along with its N-Channel and P-Channel doping, allows it to effectively regulate both ac and dc supply voltages. The device is able to regulate voltages up to 18 volts and 2 amps and features zener voltage between 58 and 66 volts. Additionally, the diode supports an operating temperature range of -55 degrees Celsius to +125 degrees Celsius.

The 1SMB5943 R5G utilizes a silicon epitaxial base as well as an aluminium nitride barrier. This allows the device to create an effective barrier for current and voltage, ensuring that the diode can deliver high current in a wide voltage range.

The working principle of the 1SMB5943 R5G is fairly simple. When a small reverse bias voltage is applied to the PN junction, a current starts to flow across the PN junction and the device attenuates the applied voltage. This prevents the current from exceeding the device\'s current rating and helps to protect against voltage transients.

In addition, the device can be used as a series protection diode, allowing it to be placed between the power source and the load. This helps to reduce the chances of damage to the circuit components due to sudden voltage surges. The diode will start conducting when the voltage reaches its zener voltage, and this helps to divert the excess voltage away from the load, thus preserving the circuit.

In conclusion, the 1SMB5943 R5G is a single diode that can be used for several applications, including high-voltage switching, voltage clamping, and transient suppression. Its Schottky diode structure, along with its N-Channel and P-Channel doping, allows it to effectively regulate both ac and dc supply voltages. Its simple working principle helps to protect the device from voltage transients and also helps to protect the circuit components from current surges.

The specific data is subject to PDF, and the above content is for reference

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