2168083-3

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2168083-3 is a component of electronic devices that has potential application in various fields. This component is a type of field-effect transistor (FET) that is capable of providing improved power efficiency for power electronics applications, such as motor drives, switching power converters, and portable electronics.

The component is designed with a wide range of features that allow users to benefit from its application in power-supply circuits. This component is able to provide excellent transient temperature rise and sustained thermal stability, which ensures higher performance and improved reliability. Additionally, the device offers low profile mounting capability which is suitable for tight-space enclosures.

The 2168083-3 device characteristics are ideal for designing circuits with switching frequencies of up to 50kHz and operating temperatures up to 125°C. It exhibits low On-Resistance and a low reverse recovery time, and can provide excellent EMI / ESD performance. It also exhibits a low peak drain current level which helps minimize the power losses associated with clamped drain-to-source transient conditions.

The 2168083-3 has a designed application field as power-supply circuits for a wide range of consumer electronics products. Its working principle is based on its physical structure. A field-effect transistor consists of source, drain and gate. The source and the drain are the two edges of the channel, while the gate is a metallic electrode located above the channel. When a voltage is applied to the gate, it attracts majority carriers onto the channel. This creates an inversion layer. A majority of carriers builds a conducting path between the source and the drain, causing a switch effect.

The 2168083-3 device is designed with an integrated J-FET (Junction Field-Effect-Transistor). In this device, the gate is located in between the source and the drain, and is connected to the substrate. When the gate voltage is above the threshold voltage, an inversion layer is created between the source and the drain, allowing current to flow through. Additionally, the drain-source on-state resistance is maintained at a low level, resulting in improved efficiency and power dissipation.

The 2168083-3 device hence works by collecting minority carriers such as electrons and holes in its channels and allowing them to move from the source to the drain. This switching effect allows the device to operate at higher frequencies with improved power efficiency. The device also has short recovery time and low transient peak drain current.

In conclusion, the 2168083-3 device is an integrated FET that has various advantages in terms of power efficiency, thermal stability, and low profile mounting capability. It has a designed application field as a switching device for power-supply circuits, and its working principle is based on its physical structure with an integrated J-FET. The device\'s characteristics make it ideal for designing circuits with switching frequencies of up to 50kHz and operating temperatures up to 125°C.

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